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參數(shù)資料
| 型號(hào)： | JAN2N3749 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP POWER SILICON TRANSISTOR |
| 中文描述： | 5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-59 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 64K |
| 代理商： | JAN2N3749 |
TECHNICAL DATA
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 315
Devices
Qualified Level
2N2880
2N3749
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
Value
80
110
8.0
0.5
5.0
2.0
30
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ T
A
= 25
0
C
(1)
@ T
C
= 100
0
C
(2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 11.4 mW/
0
C for T
A
> 25
0
C
2) Derate linearly 300 mW/
0
C for T
C
> 100
0
C
P
T
W
T
op
,
T
stg
0
C
Symbol
R
θ
JC
Max.
3.33
Unit
0
C/W
TO-59*
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 10
μ
Adc
Emitter-Base Breakdown to Voltage
I
E
= 10
μ
Adc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc
Collector-Base Cutoff Current
V
CB
= 80 Vdc
Collector-Emitter Cutoff Current
V
CE
= 110 Vdc, V
BE
= -0.5
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
V
(BR)
CEO
80
Vdc
V
(BR)
CBO
110
Vdc
V
(BR)
EBO
8.0
Vdc
I
CEO
20
μ
Adc
I
CBO
0.2
μ
Adc
I
CEX
1.0
μ
Adc
I
EBO
0.2
μ
Adc
120101
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