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參數(shù)資料
| 型號： | JAN2N2905A |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP SWITCHING SILICON TRANSISTOR |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | SIMILAR TO TO-39, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 57K |
| 代理商： | JAN2N2905A |
TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 290
Devices
Qualified Level
JAN
JANTX
JANTXV
JANS
2N2904
2N2904A
2N2904AL
2N2905
2N2905A
2N2905AL
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
2N2904
2N2905
40
2N2904A, L
2N2905A, L
60
60
5.0
600
0.6
3.0
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Junction Temp. Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 3.43 W/
0
C for T
A
> +25
0
C
2) Derate linearly 17.2 W/
0
C for T
C
> +25
0
C
P
T
T
J
,
T
stg
Symbol
R
θ
JC
Max.
0.29
Unit
0
C/mW
TO-39* (TO-205AD)
2N2904, 2N2904A
2N2905, 2N2905A
TO-5*
2N2904AL, 2N2905AL
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= +25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
2N2904, 2N2905
2N2904A, L, 2N2905A, L
Collector-Emitter Cutoff Voltage
V
CE
= 40 Vdc
2N2904, 2N2905
V
CE
= 60 Vdc
2N2904A, L, 2N2905A, L
Collector-Base Cutoff Current
V
CB
= 50 V
dc
2N2904, 2N2905
2N2904A, L, 2N2905A, L
V
CB
= 60 Vdc
All Types
Symbol
Min.
Max.
Unit
V
(BR)
CEO
40
60
Vdc
I
CES
1.0
1.0
20
10
10
μ
Adc
I
CBO
η
Adc
μ
Adc
Emitter-Base Cutoff Current
V
EB
= 3.5 Vdc
V
EB
= 5.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
I
EBO
50
10
η
Adc
μ
Adc
120101
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相關(guān)代理商/技術(shù)參數(shù) |
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| JAN2N2905AL | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk |
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