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參數(shù)資料
| 型號(hào)： | JAN2N3501L |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SIMILAR TO TO-5, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 69K |
| 代理商： | JAN2N3501L |
TECHNICAL DATA
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 366
Devices
Qualified Level
JAN
JANTX
JANTXV
JANS
2N3498
2N3498L
2N3499
2N3499L
2N3500
2N3500L
2N3501
2N3501L
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
2N3498
*
2N3499
*
100
100
6.0
500
2N3500
*
2N3501
*
150
150
6.0
300
1.0
5.0
-55 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating & Storage Junction Temp. Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance:
@ T
A
= 25
0
C
(1)
@ T
C
= 25
0
C
(2)
P
T
T
J
,
T
stg
Symbol
R
θ
JC
R
θ
JA
Max.
35
Unit
Junction-to-Case
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 W/
0
C for T
A
> 25
0
C
2) Derate linearly 28.6 W/
0
C for T
C
> 25
0
C
Junction-to-Ambient
175
0
C/W
TO-5*
2N3498L, 2N3499L
2N3500L, 2N3501L
TO-39* (TO-205AD)
2N3498, 2N3499
2N3500, 2N3501
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 50 Vdc
V
CB
= 75 Vdc
V
CB
= 100 Vdc
V
CB
= 150 Vdc
Emitter-Base Cutoff Current
V
EB
= 4.0 Vdc
V
EB
= 6.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
2N3498, 2N3499
2N3500, 2N3501
V
(BR)
CEO
I
CBO
100
150
Vdc
2N3498, 2N3499
2N3500, 2N3501
2N3498, 2N3499
2N3500, 2N3501
50
50
10
10
η
Adc
η
Adc
μ
Adc
μ
Adc
η
Adc
μ
Adc
120101
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I
EBO
25
10
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