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參數(shù)資料
| 型號(hào)： | JAN2N3585 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | NPN HIGH POWER SILICON TRANSISTOR |
| 中文描述： | 2 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 封裝： | TO-66, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | JAN2N3585 |
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 384
Devices
Qualified Level
2N3584
2N3585
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
CER
V
EBO
I
B
I
C
P
T
2N3584
250
375
300
2N3585
300
500
400
Units
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 14.85 mW/
0
C for T
A
> +25
0
C
2)
Derate linearly @ 200 mW/
0
C for T
C
> +25
0
C
6.0
1.0
2.0
2.5
35
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
T
J
,
T
stg
-65 to +200
Symbol
R
θ
JC
Max.
5.0
Unit
0
C/W
TO-66* (TO-213AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Breakdown Voltage
I
C
= 15 mAdc
Collector-Emitter Cutoff Current
V
CE
= 150 Vdc
Collector-Emitter Cutoff Current
V
CE
= 300 Vdc, V
BE
= 1.5 Vdc
V
CE
= 400 Vdc, V
BE
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
2N3584
2N3585
V
(BR)
CEO
250
300
375
500
Vdc
2N3584
2N3585
V
(BR)
CER
Vdc
I
CEO
I
CEX
5.0
1.0
1.0
0.5
mAdc
mAdc
2N3584
2N3585
I
EBO
mAdc
120101
Page 1 of 2
2N3584, 2N3585 JAN SERIES
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