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參數(shù)資料
| 型號： | JAN2N2608 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-CHANNEL J-FET |
| 中文描述： | P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-66 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 56K |
| 代理商： | JAN2N2608 |
TECHNICAL DATA
P-CHANNEL J -FET
Qualified per MIL-PRF-19500/ 295
Devices
Qualified Level
2N2608
JAN
ABSOLUTE MAXIMUM RATINGS
(T
A
= +25
0
C unless otherwise noted)
Parameters / Test Conditions
Gate-Source Voltage
Power Dissipation
(1)
T
A
= +25
0
C
Operating Junction & Storage Temperature Range
(1) Derate linearly 1.71 mW/
0
C for T
A
> +25
0
C.
Symbol
V
GSS
P
D
T
op,
T
stg
Value
30
300
-65 to +200
Units
V
mW
0
C
TO-18
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS
(T
A
= +25
0
C unless otherwise noted)
PARAMETERS / TEST CONDITIONS
Gate-Source Breakdown Voltage
V
DS
= 0, I
G
= 1.0
μ
Adc
Gate Reverse Current
V
DS
= 0, V
GS
= 30 Vdc
V
DS
= 0, V
GS
= 15 Vdc
Drain Current
V
GS
= 0, V
DS
= 5.0 Vdc
Gate-Source Cutoff Voltage
V
DS
= 5.0 V, I
D
= 1.0
μ
Adc
Magnitude of Small-Signal, Common-Source Short-Circuit Forward
Transfer Admittance
V
GS
= 0, V
DS
= 5.0 Vdc, f = 1.0 kHz
Small-Signal, Common-Source Short-Circuit Input Capacitance
V
GS
= 0, V
DS
= 5.0 Vdc, f = 1.0 MHz
Common-Source Spot Noise Figure
V
GS
= 0, V
DS
= 5.0 Vdc, f = 1.0 kHz
B
W
= 16%, R
G
= 1.0 megohms, e
gen
= 1.82 mVdc, R
L
= 470
Symbol
V
(BR)GSS
I
GSS
Min.
30
Max.
Units
Vdc
10
7.5
-5.0
6.0
4,500
η
Adc
I
DDSS
V
GS(off)
Y
fs2
-1.0
0.75
1,000
mAdc
Vdc
μ
mho
C
iss
NF
10
3.0
pF
dB
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 1
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