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參數(shù)資料
| 型號： | IXZ308N120 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Z-MOS RF Power MOSFET |
| 中文描述： | Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 151K |
| 代理商： | IXZ308N120 |
IXZ308N120
Z-MOS RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(
T
J
= 25°C unless otherwise specified)
min.
typ.
max.
R
G
1
C
iss
1960
pF
C
oss
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
59
pF
C
rss
9.2
pF
C
stray
Back Metal to any Pin
33
pF
T
d(on)
4
ns
T
on
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 1
(External)
5
ns
T
d(off)
4
ns
T
off
6
ns
Characteristic Values
(
T
J
= 25°C unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
8
Α
I
SM
Repetitive; pulse width limited by
T
JM
48
A
V
SD
I
I
V
=0 V, Pulse test, t
≤
300μs, duty cycle
≤
2%
1.5
V
T
rr
TBD
ns
Source-Drain Diode
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
5,034,796
5,049,961
5,063,307
5,381,025
5,640,045
6,404,065
6,731,002
4,891,686
5,187,117
6,583,505
4,931,844
5,237,481
6,710,463
5,017,508
5,486,715
6,727,585
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