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參數(shù)資料
| 型號： | JAN2N5038 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN HIGH POWER SILICON TRANSISTOR |
| 中文描述： | 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | SIMILAR TO TO-3, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 55K |
| 代理商： | JAN2N5038 |
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 439
Devices
Qualified Level
2N5038
2N5039
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
op
,
T
stg
2N5038
90
150
2N5039
75
125
7.0
5.0
20
140
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ T
C
= +25
0
C
(1)
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 800 mW/
0
C for T
C
> +25
0
C
Symbol
R
θ
JC
Max.
1.25
Unit
0
C/W
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Emitter-Base Breakdown Voltage
I
E
= 25 mAdc
Collector-Base Cutoff Current
V
CE
= 150 Vdc
V
CE
= 125 Vdc
Collector-Base Cutoff Current
V
CE
= 70 Vdc
V
CE
= 55 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
Collector-Emitter Cutoff Current
V
BE
= -1.5 Vdc V
CE
= 100 Vdc
V
BE
= -1.5 Vdc V
= 85 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
2N5038
2N5039
V
(BR)
CEO
90
75
Vdc
V
(BR)
EBO
7.0
Vdc
2N5038
2N5039
I
CBO
1.0
1.0
1.0
1.0
μ
Adc
2N5038
2N5039
I
CEO
μ
Adc
I
EBO
1.0
μ
Adc
2N5038
2N5039
I
CEX
5.0
5.0
μ
Adc
120101
Page 1 of 2
TO-3*
(TO-204AA)
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