參數(shù)資料
型號(hào)： IXTQ100N25P
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： PolarHT Power MOSFET N-Channel Enhancement Mode
中文描述： 100 A, 250 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3P, 3 PIN
文件頁數(shù)： 1/5頁
文件大?。?/td> 617K
代理商： IXTQ100N25P
2004 IXYS All rights reserved
G = Gate
S = Source
Features
D = Drain
TAB = Drain
DS99118B(07/04)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
V
DSS
250
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2.5
5.0
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
25
μ
A
μ
A
T
J
= 125
°
C
250
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
27
m
PolarHT
TM
Power MOSFET
IXTQ 100N25P V
DSS
IXTK 100N25P I
D25
IXTT 100N25P
R
DS(on)
= 27
m
= 250 V
= 100 A
Advanced Technical Information
N-Channel Enhancement Mode
z
International standard packages
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
PolarHT
TM
DMOS transistors
utilize proprietary designs and
process. US patent is pending.
TO-268 (IXTT)
G
S
TO-264(SP) (IXTK)
GDS
D (TAB)
D (TAB)
G
DS
(TAB)
TO-3P (IXTQ)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
250
250
V
V
V
GSM
±
20
V
I
D25
I
D(RMS)
I
DM
I
AR
T
C
= 25
°
C
External lead current limit
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
100
A
75
A
250
A
60
A
E
AR
E
AS
60
mJ
2.0
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 4
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
600
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-3P
TO-264
TO-268
5.5
10
g
g
g
5
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