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參數(shù)資料
| 型號： | IXTM11N80 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | MegaMOSFET |
| 中文描述： | 11 A, 800 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 98K |
| 代理商： | IXTM11N80 |
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
I
XYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
800
800
V
V
±
20
±
30
V
V
T
C
= 25
°
C
11N80
13N80
11N80
13N80
11
13
44
52
A
A
A
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
P
D
T
J
T
JM
T
stg
M
d
Weight
T
C
= 25
°
C
300
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
MegaMOS
TM
FET
N-Channel Enhancement Mode
V
DSS
I
D25
11 A 0.95
13 A 0.80
R
DS(on)
IXTH / IXTM 11N80 800 V
IXTH / IXTM 13N80 800 V
G
G = Gate,
S = Source,
D = Drain,
TAB = Drain
TO-204 AA (IXTM)
TO-247 AD (IXTH)
915380F (5/96)
D (TAB)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 250
μ
A
800
V
V
2
4.5
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
250
μ
A
mA
1
R
DS(on)
V
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
μ
s,
11N80
13N80
0.95
0.80
Features
G
International standard packages
G
Low R
HDMOS
TM
process
G
Rugged polysilicon gate cell structure
G
Low package inductance (< 5 nH)
- easy to drive and to protect
G
Fast switching times
Applications
G
Switch-mode and resonant-mode
power supplies
G
Motor controls
G
Uninterruptible Power Supplies (UPS)
G
DC choppers
Advantages
G
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
G
Space savings
G
High power density
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|---|---|
| IXTM13N80 | MegaMOSFET |
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| IXTH11P50 | Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated |
| IXTH12N120 | Power MOSFET, Avalanche Rated High Voltage |
| IXTH12N50A | Standard Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXTM11N90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 11A I(D) | TO-3 |
| IXTM11N95 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 11A I(D) | TO-3 |
| IXTM11P15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 11A I(D) | TO-3 |
| IXTM11P20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 11A I(D) | TO-3 |
| IXTM11P45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 11A I(D) | TO-3 |
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