- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383204 > IXTK33N50 (IXYS CORP) High Current MegaMOSFET PDF資料下載
參數(shù)資料
| 型號： | IXTK33N50 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | High Current MegaMOSFET |
| 中文描述： | 33 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264AA, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 85K |
| 代理商： | IXTK33N50 |
2 - 4
2000 IXYS All rights reserved
IXTK 33N50
Symbol
(T
J
= 25°C unless otherwise specified)
Test Conditions
Characteristic values
Min.
Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
24
S
C
iss
C
oss
C
rss
4900
690
300
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
53
30
140
40
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 1
(External)
Q
g(on)
Q
gs
Q
gd
250
30
115
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.30 K/W
0.15
K/W
Source-Drain Diode
Ratings and Characteristics
(T
J
= 25°C unless otherwise specified)
Min.
Symbol
Test Conditions
Typ.
Max.
I
S
V
GS
= 0 V
33
A
I
SM
Repetitive; pulse width limited by T
JM
132
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300 μs, duty cycle d
≤
2 %
1.5
V
t
rr
I
F
= I
S
, -di/dt = 100 A/μs, V
R
= 100 V
850
ns
TO-264 AA Outline
Millimeter
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.46 BSC
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Inches
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
Min.
.190
.100
.079
.044
.094
.114
.021
1.020
.780
Max.
.202
.114
.083
.056
.106
.122
.033
1.030
.786
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
.215 BSC
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
Dim.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXTK62N25 | High Current MegaMOSFET |
| IXTM12N45 | 12 AMPS, 450-500V, 0.4OM/0.5OM |
| IXTM12N50 | IC, I2S-SPDIF CONVERTER |
| IXTH12N45 | 12 AMPS, 450-500V, 0.4OM/0.5OM |
| IXTH12N50 | IC ARM720T MCU 90MHZ 204-TFBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXTK40P50P | 功能描述:MOSFET -40.0 Amps -500V 0.230 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTK46N50L | 功能描述:MOSFET 44 Amps 500V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTK550N055T2 | 功能描述:功率驅(qū)動器IC GigaMOS Trench T2 HiperFET PWR MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IXTK5N250 | 制造商:IXYS Corporation 功能描述:MOSFET N-CH 2500V 5A TO264 |
| IXTK600N04T2 | 功能描述:功率驅(qū)動器IC GigaMOS Trench T2 HiperFET PWR MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。