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參數(shù)資料
| 型號(hào)： | IXSK80N60B |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Current IGBT Short Circuit SOA Capability |
| 中文描述： | 160 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | TO-264AA, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | IXSK80N60B |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= 60 A; V
CE
= 10 V,
52
S
C
ies
C
oes
C
res
6600
660
196
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Q
g
Q
ge
Q
gc
240
85
90
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
off
60
45
ns
ns
ns
ns
mJ
140
180
4.2
280
280
7.0
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
60
60
4.8
190
260
6.7
ns
ns
mJ
ns
ns
mJ
R
thJC
R
thCK
0.26 K/W
0.15
K/W
Dim.
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
20.80
15.75
5.45 BSC
19.81
3.81
5.59
4.32
Inches
Min.
.190
.090
.075
.045
.075
.115
.024
.819
.620
.215 BSC
.780
.150
.220 0.244
.170
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
21.34
16.13
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
20.32
4.32
6.20
4.83
.800
.170
.190
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
Outline
IXSK 80N60B
IXSX 80N60B
TO-264 AA Outline
Millimeter
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.46 BSC
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Inches
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
Min.
.190
.100
.079
.044
.094
.114
.021
1.020
.780
Max.
.202
.114
.083
.056
.106
.122
.033
1.030
.786
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
.215 BSC
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
Dim.
Inductive load, T
J
= 25
°
C
I
C
= I
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
Remarks: Switching times
may increase for
V
(Clamp) > 0.8 V
,
higher T
J
or increased R
G
Inductive load, T
J
=125
°
C
I
C
= I
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
Remarks: Switching times
may increase for
V
(Clamp) > 0.8 V
,
higher T
J
or increased R
G
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