參數(shù)資料
型號： IXSK40N60CD1
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： IGBT with Diode
中文描述： 75 A, 600 V, N-CHANNEL IGBT, TO-264
封裝： TO-264, 3 PIN
文件頁數(shù)： 1/2頁
文件大小： 55K
代理商： IXSK40N60CD1
1 - 2
2000 IXYS All rights reserved
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C, limited by leads
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 22
Clamped inductive load, L = 30 H
75
40
150
A
A
A
I
= 80
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 360 V, T
J
= 125 C
R
G
= 22
non repetitive
T
C
= 25 C
10
s
P
C
T
J
T
JM
T
stg
M
d
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
280
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque
(TO-264)
0.9/6
Nm/lb.in.
300
C
Weight
TO-264
PLUS247
10
g
g
6
V
CES
I
C25
V
CE(sat)
=
t
fi(typ)
=
=
600 V
75 A
2.5 V
70 ns
=
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 1 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
600
V
V
4
7
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 150 C
650
A
5
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.5
V
98574A (7/00)
PLUS 247
TM
(IXSX)
IGBT with Diode
PLUS247
TM
package
Short Circuit SOA Capability
IXSK 40N60CD1
IXSX 40N60CD1
Features
International standard packages
Guaranteed Short Circuit SOA
capability
High frequency IGBT and anti-
parallel FRED in one package
Latest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Fast Recovery,low leakage
Epitaxial
Diode
- soft recovery with low I
RM
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings (two devices in one
package)
Reduces assembly time and cost
TO-264 AA
(IXSK)
GCE
GCE
C (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
相關(guān)PDF資料
PDF描述
IXSX IGBT with Diode
IXSX40N60CD1 IGBT with Diode
IXSM40N60A Low VCE(sat) IGBT, High Speed IGBT
IXSH40N60A Low VCE(sat) High Speed IGBT(VCE(sat)為3.0V的高速絕緣柵雙極場效應(yīng)管)
IXSM40N60 Low VCE(sat) IGBT, High Speed IGBT
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