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參數(shù)資料
| 型號： | IXSH30N60U1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low VCE(sat) High Speed IGBT with Diode(VCE(sat)為2.5V的高速絕緣柵雙極場效應管(帶二極管）) |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 82K |
| 代理商： | IXSH30N60U1 |
1 - 6
2000 IXYS All rights reserved
TO-247 AD
V
CES
600 V
600 V
I
C25
50 A
50 A
V
CE(sat)
2.5 V
3.0 V
Low V
CE(sat)
IGBT with Diode
High Speed IGBT with Diode
IXSH
30
N60U1
IXSH
30
N60AU1
Combi Packs
Short Circuit SOA Capability
GC
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 33
Clamped inductive load, L = 100 H
50
30
A
A
A
100
I
= 60
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 360 V, T
J
= 125 C
R
G
= 33
non repetitive
T
C
= 25 C
10
s
P
C
T
J
T
JM
T
stg
M
d
Weight
200
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque
1.13/10
Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 750 A, V
GE
= 0 V
= 2.5 mA, V
CE
= V
GE
600
V
V
5
8
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
500
A
8
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
30N60U1
30N60AU1
2.5
3.0
V
V
Features
International standard package
JEDEC TO-247 AD
High frequency IGBT with guaranteed
Short Circuit SOA capability
IGBT and anti-parallel FRED in one
package
2nd generation HDMOS
TM
process
Low V
- for low on-state conduction losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
High power density
92714F (12/96)
IXYS reserves the right to change limits, test conditions, and dimensions.
相關PDF資料 |
PDF描述 |
|---|---|
| IXSH30N60AU1 | Low VCE(sat) High Speed IGBT with Diode(VCE(sat)為3.0V的高速絕緣柵雙極場效應管(帶二極管）) |
| IXSH30N60 | Low VCE(sat) High Speed IGBT(VCE(sat)為2.5V的高速絕緣柵雙極場效應管) |
| IXSH30N60A | Low VCE(sat) High Speed IGBT(VCE(sat)為3.0V的高速絕緣柵雙極場效應管) |
| IXSM30N60 | Low VCE(sat) IGBT, High Speed IGBT |
| IXSM30N60A | Low VCE(sat) IGBT, High Speed IGBT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IXSH35N100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 35A I(C) | TO-247AD |
| IXSH35N100A | 功能描述:IGBT 晶體管 35 Amps 1000V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH35N120A | 功能描述:IGBT 晶體管 HIGH SPEED IGBT 1200V, 70A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH35N120B | 功能描述:IGBT 晶體管 70 Amps 1200V 3.6 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH35N135A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.35KV V(BR)CES | 70A I(C) | TO-247AD |
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