參數資料
型號： IXSH25N100
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： Low VCE(sat) High Speed IGBT(VCE(sat)為3.5V的高速絕緣柵雙極場效應管)
中文描述： 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數： 1/6頁
文件大?。?/td> 102K
代理商： IXSH25N100
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation. All rights reserved.
TO-247 AD (IXSH)
V
CES
1000 V
I
C25
50 A
50 A
V
CE(sat)
3.5 V
4.0 V
Low V
CE(sat)
IGBT
High Speed IGBT
IXSH/IXSM
25
N100
IXSH/IXSM
25
N100A 1000 V
Short Circuit SOA Capability
G
C
E
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
1000
1000
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 4.7
Clamped inductive load, L = 30
μ
H
50
25
100
A
A
A
I
= 50
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 0.6 V
CES
, T
J
= 125
°
C
R
G
= 33
,
non repetitive
T
C
= 25
°
C
10
μ
s
P
C
T
J
T
JM
T
stg
M
d
Weight
g
200
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 3 mA, V
GE
= 0 V
= 2.5 mA, V
CE
= V
GE
1000
V
V
5
8
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
250
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
25N100
25N100A
3.5
4.0
V
V
TO-204 AE (IXSM)
C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
G
International standard packages
G
Guaranteed Short Circuit SOA
capability
G
Low V
- for low on-state conduction losses
G
High current handling capability
G
MOS Gate turn-on
- drive simplicity
G
Fast Fall Time for switching speeds
up to 20 kHz
Applications
G
AC motor speed control
G
Uninterruptible power supplies (UPS)
G
Welding
Advantages
G
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
G
High power density
IXYS reserves the right to change limits, test conditions and dimensions.
91548F (4/96)
相關PDF資料
PDF描述
IXSM25N100 Low VCE(sat) IGBT, High Speed IGBT
IXSM25N100A Low VCE(sat) IGBT, High Speed IGBT
IXSH25N120AU1 IGBT with Diode
IXSH25N120A IGBT
IXSH30N60BD1 High Speed IGBT with Diode(VCES為600V，VCE(sat)為2.0V的高速絕緣柵雙極晶體管(帶二極管）)
相關代理商/技術參數
參數描述
IXSH25N100A 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High Speed IGBT
IXSH25N120A 功能描述:IGBT 晶體管 50 Amps 1200V 4.0 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSH25N120AU1 功能描述:IGBT 晶體管 S-SERIE MED SPD IGBT FREEWHEELING 200V50A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSH30N60 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High Speed IGBT
IXSH30N60A 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High Speed IGBT
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*