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參數(shù)資料
| 型號： | IXSH24N60U1 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFASTTM IGBT with Diode |
| 中文描述： | 48 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | IXSH24N60U1 |
1 - 2
2000 IXYS All rights reserved
Features
International standard package
JEDEC TO-247 AD
High frequency IGBT and anti-parallel
FRED in one package
2nd generation HDMOS
TM
process
Low V
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery
Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
Suitable for surface mounting
Easy to mount with 1 screw, TO-247
(isolated mounting screw hole)
Reduces assembly time and cost
HiPerFAST
TM
IGBT with Diode
Short Circuit SOA Capability
92820I (7/00)
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C600
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
V
600
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 10
Clamped inductive load, L = 100 H
48
24
96
A
A
A
I
= 48
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 360 V, T
J
= 125 C,
R
G
= 82 , non-repetitive
T
C
= 25 C
10
s
P
C
T
J
T
JM
T
stg
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
150
W
-55 ... +150
C
C
C
150
-55 ... +150
300
C
260
C
M
d
Weight
Mounting torque, TO-247
1.13/10 Nm/lb.in.
TO-247 AD
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 750 A, V
GE
= 0 V
= 1.5 mA, V
CE
= V
GE
600
3.5
V
V
6.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
500
A
8
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
IXSH 24N60U1
IXSH 24N60AU1
2.2
2.7
V
V
GCE
TO-247 AD
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
V
CES
600 V
600 V
I
C25
48 A
48 A
V
CE(sat)
2.2 V
2.7 V
IXSH 24N60U1
IXSH
24N60AU1
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXSH24N60 | HiPerFAST IGBT(VCES為600V，VCE(sat)為2.2V的HiPerFAST絕緣柵雙極晶體管) |
| IXSH24N60A | HiPerFAST IGBT(VCES為600V，VCE(sat)為2.7V的HiPerFAST絕緣柵雙極晶體管) |
| IXSH25N100A | Low VCE(sat) High Speed IGBT(VCE(sat)為4.0V的高速絕緣柵雙極場效應(yīng)管) |
| IXSH25N100 | Low VCE(sat) High Speed IGBT(VCE(sat)為3.5V的高速絕緣柵雙極場效應(yīng)管) |
| IXSM25N100 | Low VCE(sat) IGBT, High Speed IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXSH24N60U1S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-263VAR |
| IXSH25N100 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High Speed IGBT |
| IXSH25N100A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High Speed IGBT |
| IXSH25N120A | 功能描述:IGBT 晶體管 50 Amps 1200V 4.0 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH25N120AU1 | 功能描述:IGBT 晶體管 S-SERIE MED SPD IGBT FREEWHEELING 200V50A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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