參數(shù)資料
型號： IXKN40N60C
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： CoolMOS Power MOSFET
中文描述： 40 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： MINIBLOC-4
文件頁數(shù)： 1/2頁
文件大?。?/td> 117K
代理商： IXKN40N60C
2000 IXYS All rights reserved
1 - 2
Symbol
Conditions
Maximum Ratings
V
DSS
T
J
= 25 C to 150 C
600
V
V
GS
20
V
I
D25
I
D90
T
C
= 25 C
T
C
= 90 C
40
27
A
A
E
AR
E
AS
I
D
= 20 A, L = 5 μH, T
= 25 C, repetitive
I
D
= 10 A, L = 36 mH, T
VJ
= 25 C, non repetitive
1
mJ
1.8
J
dv/dt
V
DS
V
DSS
, I
S
= 47 A, di
S
/dt = 100 A/μs, T
J
= T
JM
6
V/ns
P
D
T
C
= 25 C
290
W
T
J
T
JM
T
stg
-40 ... +150
C
C
C
150
-40 ... +150
V
ISOL
50/60 Hz, RMS I
ISOL
1 mA
2500
V~
M
d
Mounting torque
Terminal connetion torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
V
DSS
I
D25
R
DS(on)
600 V
40 A
70 m
CoolMOS
Power MOSFET
N-Channel Enhancement Mode
Low R
DSon
, High V
DSS
MOSFET
IXKN 40N60C
MOSFET
Symbol
Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
600
V
I
DSS
V
DS
= 0.8
V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
0.5
50
25
μA
μA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5
I
D25
70
m
V
GS(th)
V
DS
= V
GS
, I
D
= 2.5 mA
3.5
5.5
V
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
Features
G
miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation due to AlN
ceramic substrate
- International standard package SOT-227
- Easy screw assembly
G
Fast CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
G
Enhanced total power density
Applications
G
Switched mode power supplies (SMPS)
G
Uninterruptible power supplies (UPS)
G
Power factor correction (PFC)
G
Welding
G
Inductive heating
G = Gate
S = Source
D = Drain
Either source terminal at miniBLOC can be used
as main or kelvin source
G
S
D
S
miniBLOC, SOT-227 B
E72873
CoolMOS is a trademark of
Infineon Technologies AG.
Advanced Technical Information
IXYS reserves the right to change limits, test conditions and dimensions.
相關(guān)PDF資料
PDF描述
IXKN45N80C CoolMOS Power MOSFET
IXKN75N60 CoolMOS Power MOSFET
IXKN75N60C CoolMOS Power MOSFET
IXKR40N60 CoolMOS Power MOSFET in ISOPLUS247 Package
IXKR40N60C CoolMOS Power MOSFET in ISOPLUS247 Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXKN45N80C 功能描述:MOSFET 45 Amps 800V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXKN75N60 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:CoolMOS Power MOSFET
IXKN75N60C 功能描述:MOSFET 75 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXKP10N60C5 功能描述:MOSFET 10 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXKP10N60C5M 功能描述:MOSFET 10 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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