參數(shù)資料
型號(hào)： IXKN75N60
廠商： IXYS CORP
元件分類： JFETs
英文描述： CoolMOS Power MOSFET
中文描述： 75 A, 600 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： MINIBLOC-4
文件頁數(shù)： 1/3頁
文件大?。?/td> 70K
代理商： IXKN75N60
2001 IXYS All rights reserved
1 - 3
V
DSS
I
D25
R
DS(on)
35 m
600 V
75 A
CoolMOS
Power MOSFET
N-Channel Enhancement Mode
Low R
DSon
, High V
DSS
MOSFET
IXKN 75N60C
Features
●
miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation due to AlN
ceramic substrate
- International standard package SOT-227
- Easy screw assembly
●
fast CoolMOS power MOSFET - 2
nd
generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
●
Enhanced total power density
Applications
●
Switched mode power supplies (SMPS)
●
Uninterruptible power supplies (UPS)
●
Power factor correction (PFC)
●
Welding
●
Inductive heating
G = Gate
S = Source
D = Drain
Either source terminal at miniBLOC can be used
as main or kelvin source
G
S
D
S
miniBLOC, SOT-227 B
E72873
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
MOSFET
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C
600
V
V
GS
±20
V
I
D25
I
D90
T
C
= 25°C
T
C
= 90°C
75
50
A
A
dv/dt
V
DS
< V
; I
F
≤
100A;
di
F
/dt
≤
200A/μs
T
VJ
= 150°C
6
V/ns
E
AS
E
AR
I
D
= 10 A; L = 36 mH; T
C
= 25°C
I
D
= 20 A; L = 5 μH; T
C
= 25°C
1.8
J
1
mJ
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS
= 10 V;
I
D
= I
D90
30
35 m
V
GSth
V
DS
= 20 V;
I
D
= 5 mA;
3.5
5.5
V
I
DSS
V
DS
= V
DSS
;
V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.05 mA
0.1
mA
I
GSS
V
GS
= ±20 V; V
DS
= 0 V
200
nA
Q
g
Q
gs
Q
gd
440
112
246
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
30
95
100
10
ns
ns
ns
ns
V
F
(reverse conduction) I
F
= 37.5 A;
V
GS
= 0 V
0.9
1.1
V
R
thJC
0.22 K/W
V
GS
= 10 V; V
DS
= 350 V; I
D
= 100 A
V
= 10 V; V
= 380 V;
I
D
= 50 A; R
G
= 1
Preliminary
1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXKN75N60C 功能描述:MOSFET 75 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXKP10N60C5 功能描述:MOSFET 10 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXKP10N60C5M 功能描述:MOSFET 10 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXKP13N60C5 功能描述:MOSFET 13 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXKP13N60C5M 功能描述:MOSFET 13 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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