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參數(shù)資料
| 型號： | IXGT6N170A |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | High Voltage IGBT |
| 中文描述： | 6 A, 1700 V, N-CHANNEL IGBT, TO-268AA |
| 封裝： | PLASTIC, TO-268, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 61K |
| 代理商： | IXGT6N170A |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
e
P
TO-247 AD Outline
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Note 2
= I
C25
; V
CE
= 20 V
2
3.5
S
C
ies
C
oes
C
res
330
23
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
6
Q
G
Q
GE
Q
GC
20
3.6
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
8
t
d(on)
t
ri
t
d(off)
t
fi
E
off
46
40
220
32
0.19
ns
ns
ns
ns
mJ
450
65
0.40
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
48
43
0.7
230
41
0.26
ns
ns
mJ
ns
ns
mJ
R
thJC
R
thCK
1.65 K/W
(TO-247)
0.25
K/W
Inductive load, T
J
= 125
°
C
I
C
= I
C25
, V
GE
= 15 V
R
G
= 33
,
V
CE
= 0.5 V
CES
Inductive load, T
J
= 25
°
C
I
C
= I
C25
, V
GE
= 15 V
R
G
= 33
,
V
CE
= 0.5 V
CES
IXGH 6N170A
IXGT 6N170A
TO-268 Outline
Dim.
Millimeter
Min.
4.9
2.7
.02
1.15
1.9
.4
13.80
15.85
13.3
e 5.45 BSC .215 BSC
H
18.70
19.10
L
2.40
2.70
L1
1.20
1.40
Inches
Min.
.193
.106
.001
.045
.75
.016
.543
.624
.524
Max.
5.1
2.9
.25
1.45
2.1
.65
14.00
16.05
13.6
Max.
.201
.114
.010
.057
.83
.026
.551
.632
.535
A
A
1
A
2
b
b
2
C
D
E
E
1
.736
.094
.047
.752
.106
.055
L2
L3 0.25 BSC .010 BSC
L4
3.80
4.10
1.00
1.15
.039
.045
.150
.161
Notes:1.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2.
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
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