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    參數(shù)資料
    

    


    


    
型號(hào)：
IXGT6N170A

    

    
廠商：
IXYS CORP

    

    
元件分類：
IGBT 晶體管

    

    
英文描述：
High Voltage IGBT

    

    
中文描述：
6 A, 1700 V, N-CHANNEL IGBT, TO-268AA

    

    
封裝：
PLASTIC, TO-268, 3 PIN

    

    
文件頁數(shù)：
1/2頁

    

    
文件大小：
61K

    

    
代理商：
IXGT6N170A


    

    

    

	
    
    
    

    
    
	
     2003 IXYS All rights reserved
    V
    CES
    I
    C25
    V
    CE(sat)
    t
    fi(typ)
    = 1700
    =     6
    =    7.0
    =     32 ns
    V
    A
    V
    IXGH  6N170A
    IXGT  6N170A
    C (TAB)
    G = Gate,
    E = Emitter,
    C = Collector,
    TAB = Collector
    GCE
    TO-247 AD (IXGH)
    Features
    z
    International standard packages
    JEDEC TO-268 and
    JEDEC TO-247 AD
    z
    High current handling capability
    z
    MOS Gate turn-on
    - drive simplicity
    z
    Rugged NPT structure
    z
    Molding epoxies meet UL
    94
    V-0
    flammability classification
    Applications
    z
    Capacitor discharge & pulser circuits
    z
    AC motor speed control
    z
    DC servo and robot drives
    z
    DC choppers
    z
    Uninterruptible power supplies (UPS)
    z
    Switched-mode and resonant-mode
    power supplies
    Advantages
    z
    High power density
    z
    Suitable for surface mounting
    z
    Easy to mount with 1 screw,
    (isolated mounting screw hole)
    DS98990A(01/03)
    Symbol
    Test Conditions
    Characteristic Values
    (T
    J
     = 25
    °
    C, unless otherwise specified)
    min.
    typ.
    max.
    BV
    CES
    V
    GE(th)
    I
    C
    I
    C
    = 250 
    μ
    A, V
    GE
     = 0 V
    = 250 
    μ
    A, V
    CE
     = V
    GE
    1700
    3.0
    V
    V
    5.0
    I
    CES
    V
    CE
    = 0.8  V
    CES
    V
    GE
    = 0 V
    T
    J
     =   25
    °
    C
    T
    J
     = 125
    °
    C
    10
    μ
    A
    μ
    A
    Note 1
    500
    I
    GES
    V
    CE
    = 0 V, V
    GE
     = 
    ±
    20 V
    ±
    100
    nA
    V
    CE(sat)
    I
    C
    = I
    C90
    , V
    GE
     = 15 V
    T
    J
     =   25
    °
    C
    T
    J
     = 125
    °
    C
    5.5
    6.5
    7.0
    V
    V
    Symbol
    Test Conditions
    Maximum Ratings
    V
    CES
    V
    CGR
    V
    GES
    V
    GEM
    I
    C25
    I
    C90
    I
    CM
    SSOA
    (RBSOA)
    T
    J
    = 25
    °
    C to 150
    °
    C
    T
    J
    = 25
    °
    C to 150
    °
    C; R
    GE
     = 1 M
    Continuous
    Transient
    1700
    1700
    V
    V
    ±
    20
    ±
    30
    V
    V
    T
    C
    = 25
    °
    C
    T
    C
    = 90
    °
    C
    T
    C
    = 25
    °
    C, 1 ms
    V
    = 15 V, T
     = 125
    °
    C, R
    G
     = 33
    Clamped inductive load
    6
    3
    A
    A
    A
    14
     I
     = 12
    @ 0.8 V
    CES
    A
    t
    SC
    T
    J
     = 125
    °
    C, V
    CE
     = 1200 V;  V
    GE
     = 15 V, R
    G
      = 33
     10
    μ
    s
    P
    C
    T
    J
    T
    JM
    T
    stg
    T
    C
    = 25
    °
    C
    75
    W
    -55 ... +150
    °
    C
    °
    C
    °
    C
    150
    -55 ... +150
    M
    d
    Mounting torque (M3)
    (TO-247)
    1.13/10Nm/lb.in.
    Maximum lead temperature for soldering
    1.6 mm (0.062 in.) from case for 10 s
    Weight
    300
    °
    C
    TO-247
    TO-268
    6
    4
    g
    g
    TO-268 (IXGT)
    G
    E
    High Voltage
    IGBT
    C (TAB)
    Advance Technical Data
    
    
    
    
    
    


    


    

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