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參數(shù)資料
| 型號： | IXGH32N60BD1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Connector Cover; Number of Contacts:1; Color:Red; Contact Termination:Crimp or Solder |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 69K |
| 代理商： | IXGH32N60BD1 |
2002 IXYS All rights reserved
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
600
V
600
V
Continuous
±
20
±
30
V
Transient
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
60
A
32
A
120
A
V
GE
= 15 V, T
VJ
= 125
°
C, R
G
= 22
Clamped inductive load, L = 100
μ
H
I
CM
= 64
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
T
C
= 25
°
C
200
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque (M3) TO-247AD
1.13/10 Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Weight
TO-247AD
TO-268
6
4
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
= 250
μ
A, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
600
V
I
C
2.5
5.0
V
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 150
°
C
200
μ
A
mA
3
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.3
V
HiPerFAST
TM
IGBT
with Diode
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 600 V
= 60 A
= 2.3 V
= 85 ns
98749B (03/02)
C
(TAB)
GCE
TO-247 AD
(IXGH)
TO-268
(IXGT)
G
E
C
(TAB)
Features
International standard packages
High frequency IGBT and antiparallel
FRED in one package
High current handling capability
HiPerFAST
TM
HDMOS
TM
process
MOS Gate turn-on
-drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Space savings (two devices in one
package)
High power density
Suitable for surface mounting
Very low switching losses for high
frequency applications
Easy to mount with 1 screw,TO-247
(insulated mounting screw hole)
IXGH 32N60BD1
IXGT 32N60BD1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGT32N60BD1 | HiPerFAST IGBTwith Diode |
| IXGH32N60AU1S | HiPerFAST IGBT with Diode Combi Pack |
| IXGH32N60BU1 | HiPerFAST IGBT with Diode(VCES為600V，VCE(sat)為2.5V的HiPerFAST絕緣柵雙極晶體管（帶二極管）) |
| IXGH32N60B | HiPerFAST IGBT |
| IXGH32N60C | HiPerFAST IGBT Lightspeed Series |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH32N60BS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247SMD |
| IXGH32N60BU1 | 功能描述:IGBT 晶體管 60 Amps 600V 2.3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH32N60BU1S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247SMD |
| IXGH32N60C | 功能描述:IGBT 晶體管 60 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH32N60CD1 | 功能描述:IGBT 晶體管 60 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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