參數(shù)資料
型號: IXGH32N50B
廠商: IXYS CORP
元件分類: IGBT 晶體管
英文描述: HiPerFAST IGBT
中文描述: 60 A, 500 V, N-CHANNEL IGBT, TO-247AD
封裝: TO-247AD, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 50K
代理商: IXGH32N50B
1997 IXYS All rights reserved
TO-247 SMD
(32N50BS)
G
E
C (TAB)
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
G
C
E
TO-247 AD
Features
l
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
l
High current handling capability
l
Newest generation HDMOS
TM
process
l
MOS Gate turn-on
- drive simplicity
Applications
l
PFC circuits
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switched-mode and resonant-mode
power supplies
Advantages
l
High power density
l
Very fast switching speeds for high
frequency applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
500
2.5
V
V
5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.0
V
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
500
500
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 33
Clamped inductive load, L = 100
μ
H
60
32
120
A
A
A
I
= 64
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25
°
C
200
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
300
°
C
M
d
Weight
Mounting torque (M3)
1.13/10Nm/lb.in.
TO-247 AD
TO-247 SMD
6
4
g
g
Preliminary Data Sheet
HiPerFAST
TM
IGBT
IXGH32N50B
IXGH32N50BS
V
CES
I
C25
V
CE(sat)
t
fi
=
=
=
=
500 V
60 A
2.0 V
80 ns
95564A (4/97)
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