參數(shù)資料
型號： IXGH32N170
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： High Voltage IGBT
中文描述： 75 A, 1700 V, N-CHANNEL IGBT, TO-247AD
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 2/5頁
文件大小： 585K
代理商： IXGH32N170
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
e
P
TO-247 AD Outline
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
; V
CE
= 10 V,
22
30
S
I
C(ON)
V
GE
= 10V, V
CE
= 10V
120
A
C
ies
C
oes
C
res
3500
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
165
pF
40
pF
Q
g
Q
ge
Q
gc
155
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
30
nC
51
nC
t
d(on)
t
ri
t
d(off)
t
fi
E
off
45
ns
38
ns
270
500
ns
250
500
ns
11
20
mJ
t
d(on)
t
ri
E
on
t
d(off)
t
fi
48
ns
42
ns
6.0
mJ
360
ns
560
ns
E
off
14
mJ
R
thJC
0.35 K/W
R
thCK
(TO-247)
0.25
K/W
Inductive load, T
J
= 125
°
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.6 V
CES
, R
G
= R
off
= 2.7
Inductive load, T
J
= 25
°
C
I
C
= I
, V
GE
= 15 V
V
CE
= 0.6 V
CES
, R
G
= R
off
= 2.7
Min Recommended Footprint
IXGH 32N170
IXGT 32N170
TO-268 Outline
Dim.
Millimeter
Min.
4.9
2.7
.02
1.15
1.9
.4
13.80
15.85
13.3
e 5.45 BSC .215 BSC
H
18.70
19.10
L
2.40
2.70
L1
1.20
1.40
Inches
Min.
.193
.106
.001
.045
.75
.016
.543
.624
.524
Max.
5.1
2.9
.25
1.45
2.1
.65
14.00
16.05
13.6
Max.
.201
.114
.010
.057
.83
.026
.551
.632
.535
A
A
1
A
2
b
b
2
C
D
E
E
1
.736
.094
.047
.752
.106
.055
L2
L3 0.25 BSC .010 BSC
L4
3.80
4.10
1.00
1.15
.039
.045
.150
.161
相關(guān)PDF資料
PDF描述
IXGT32N170 High Voltage IGBT
IXGH32N50BU1 HiPerFAST IGBT with Diode Combi Pack
IXGH32N50BU1S HiPerFAST IGBT with Diode Combi Pack
IXGH32N50B HiPerFAST IGBT
IXGH32N50BS HiPerFAST IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXGH32N170A 功能描述:IGBT 晶體管 VRY HI VOLT NPT IGBT 1700V, 72A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGH32N50B 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT
IXGH32N50BS 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT
IXGH32N50BU1 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT with Diode Combi Pack
IXGH32N50BU1S 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT with Diode Combi Pack
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