參數(shù)資料
型號： IXFT80N085
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFETTM Power MOSFETs
中文描述： 85 A, 80 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
封裝： TO-268, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 54K
代理商： IXFT80N085
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
T
C
= 25 C
Lead current limit
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
85
85
20
30
80
75
320
V
V
V
V
A
A
A
80
50
2.5
5
A
mJ
J
I
S
T
J
150 C, R
G
= 2
T
C
= 25 C
I
, di/dt 100 A/ s, V
DD
V
DSS
,
V/ns
P
D
T
J
T
JM
T
stg
300
W
-55 to +150
150
-55 to +150
C
C
C
T
L
1.6 mm (0.063 in) from case for 10 s
300
C
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
TO-247
TO-268
6
4
g
g
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary data sheet
Features
International standard packages
Low R
Rated for unclamped Inductive load
switching (UIS)
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
85
2.0
V
V
4.0
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
50
1
A
mA
R
DS(on)
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
9
m
TO-247 AD (IXFH)
G = Gate D = Drain
S = Source TAB = Drain
HiPerFET
TM
Power MOSFETs
TO-268 (IXFT) Case Style
(TAB)
G
S
V
DSS
I
D25
R
DS(on)
= 9 m
= 85 V
= 80 A
t
rr
200 ns
IXFH 80N085
IXFT 80N085
(TAB)
98709 (03/24/00)
IXYS reserves the right to change limits, test conditions, and dimensions.
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