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參數(shù)資料
| 型號(hào)： | IXFH80N20Q |
| 廠商： | IXYS CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導(dǎo)通電阻28mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| 中文描述： | 80 A, 200 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | IXFH80N20Q |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
200
200
V
V
20
30
V
V
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
80
320
80
A
A
A
45
1.5
mJ
J
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
360
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
C
Mounting torque
TO-247
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
Weight
TO-247
TO-264
TO-268
6
g
g
g
10
4
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250 uA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
200
2.0
V
V
4.0
100
nA
T
J
= 25 C
T
J
= 125 C
25
1
A
mA
R
DS(on)
28
m
G = Gate
S = Source
TAB = Drain
98605A (6/99)
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
(TAB)
G
S
TO-264 AA (IXFK)
S
G
D
D (TAB)
V
DSS
I
D25
R
DS(on)
= 28 m
t
rr
= 200 V
= 80 A
200 ns
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
Features
Low gate charge
International standard packages
Epoxy
meet
UL
94
V-0, flammability
classification
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
Easy to mount
Space savings
High power density
IXFH 80N20Q
IXFK 80N20Q
IXFT 80N20Q
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFH80N30P3 | 功能描述:MOSFET Polar3 HiPerFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH86N30T | 功能描述:MOSFET Trench HiperFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH88N20Q | 功能描述:MOSFET 88 Amps 200V 0.03 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH88N30P | 功能描述:MOSFET 88 Amps 300V 0.04 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH8N65 | 制造商:IXYS 制造商全稱(chēng):IXYS Corporation 功能描述:HIPERFET Power MOSFTETs |
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