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參數(shù)資料
| 型號(hào)： | IXBT16N170A |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor |
| 中文描述： | 16 A, 1700 V, N-CHANNEL IGBT, TO-268AA |
| 封裝： | TO-268, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 51K |
| 代理商： | IXBT16N170A |
2000 IXYS All rights reserved
1 - 2
Advanced Technical Information
V
CES
I
C25
V
CE(sat)
=
t
fi(typ)
= 1700 V
=
16 A
6.0 V
=
50 ns
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD (IXBH)
Features
Monolithic fast reverse diode
High Blocking Voltage
JEDEC TO-268 surface mount and
JEDEC TO-247 AD packages
Low switching losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Molding epoxies meet UL
94
V-0
flammability classification
Applications
AC motor speed control
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Capacitor discharge circuits
Advantages
Lower conduction losses than MOSFETs
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
98707 (02/23/00)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250 A, V
GE
= 0 V
= 250 A, V
CE
= V
GE
1700
2.5
V
V
5.5
I
CES
V
CE
= 0.8 V
V
GE
= 0 V; Note 1
50
1.5
A
T
J
= 125 C
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
Note 2
= I
C90
, V
GE
= 15 V
6.0
V
V
T
J
= 125 C
5.0
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
1700
1700
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
G
= 33
Clamped inductive load
16
10
40
A
A
A
I
CM
=
V
CES
=
40
A
V
1350
t
(SCSOA)
V
GE
= 15 V, V
=
1200V, T
J
= 125 C
R
G
= 33 non repetitive
T
C
= 25 C
10
s
P
C
T
J
T
JM
T
stg
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering SMD devices for 10 s
150
W
-55 ... +150
C
C
C
150
-55 ... +150
300
C
260
C
M
d
Weight
Mounting torque (M3) (TO-247)
1.13/10 Nm/lb.in.
6
4
TO-247
TO-268
g
g
TO-268
(IXBT)
G
E
High Voltage, High Gain
BIMOSFET
TM
Monolithic
Bipolar MOS Transistor
IXBH 16N170A
IXBT 16N170A
IXYS reserves the right to change limits, test conditions, and dimensions.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXBT20N300 | 功能描述:IGBT 3000V 50A 250W TO268 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:BIMOSFET™ 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| IXBT20N300HV | 制造商:IXYS Corporation 功能描述:IGBT 3000V 50A 250W TO268 |
| IXBT24N170 | 功能描述:MOSFET BiMOSFETs/Reverse Conducting IGBTs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXBT2N250 | 功能描述:IGBT 2500V 5A 32W TO268 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:BIMOSFET™ 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| IXBT32N300 | 功能描述:IGBT 3000V 80A 400W TO268 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:BIMOSFET™ 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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