參數(shù)資料
型號(hào)： ITF87008DQT
廠商： Intersil Corporation
英文描述： Dual N-Channel,Specified Power MOSFET(雙N溝道邏輯電平功率MOS場效應(yīng)管)
中文描述： 雙N溝道，指定功率MOSFET（雙?溝道邏輯電平功率馬鞍山場效應(yīng)管）
文件頁數(shù)： 8/12頁
文件大?。?/td> 201K
代理商： ITF87008DQT
8
PSPICE Electrical Model
.SUBCKT ITF87008DQT 2 1 3 ;
REV 18 Jan 2000
CA 12 8 1.17e-9
CB 15 14 1.17e-9
CIN 6 8 8.15e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 27.05
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 1.04e-9
LSOURCE 3 7 1.29e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 2.8e-3
RGATE 9 20 118.9
RLDRAIN 2 5 10
RLGATE 1 9 9 10.4
RLSOURCE 3 7 1.29
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 12.8e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*185),2))}
.MODEL DBODYMOD D (IS = 2.0e-10 RS = 1.34e-2 TRS1 = 1.1e-3 TRS2 = 2.0e-6 IKF= 2.3 XTI = 0 N=1.12 CJO = 3.9e-10 TT = 8.0e-9 M = 0.43)
.MODEL DBREAKMOD D (RS = 2.3e-1 TRS1 = 4.0e-3 TRS2 = -6.0e-6)
.MODEL DESD1MOD D (BV = 11.0 Tbv1= -2.32e-3 N= 12 RS = 35)
.MODEL DESD2MOD D (BV = 11.1 Tbv1= -2.32e-3 N= 12 RS = 35)
.MODEL DPLCAPMOD D (CJO = 7.28e-10 IS = 1e-30 VJ = 0.40 M = 0.46)
.MODEL MMEDMOD NMOS (VTO = 1.11 KP = 19 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 118.9 RS = 0.09)
.MODEL MSTROMOD NMOS (VTO = 1.39 KP = 107 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u LAMBDA = 0.018)
.MODEL MWEAKMOD NMOS (VTO = 0.85 KP = 0.21 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1189 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 6.4e-4 TC2 = -9.35e-7)
.MODEL RDRAINMOD RES (TC1 = 1.4e-2 TC2 = 5.0e-6)
.MODEL RSLCMOD RES (TC1 = 4.07e-3 TC2 = 2.25e-5)
.MODEL RSOURCEMOD RES (TC1 = 1.00e-3 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -1.8e-3 TC2 = -4.0e-6)
.MODEL RVTEMPMOD RES (TC1 = -9.2e-4 TC2 = 1.7e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.8 VOFF= -1.9)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.9 VOFF= -2.8)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.0 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
16
EVTHRES
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
18
22
9
ESG
LGATE
RLGATE
20
+
-
+
DESD1
91
DESD2
6
ITF87008DQT
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