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參數(shù)資料
| 型號： | ITF87008DQT |
| 廠商： | Intersil Corporation |
| 英文描述： | Dual N-Channel,Specified Power MOSFET(雙N溝道邏輯電平功率MOS場效應(yīng)管) |
| 中文描述： | 雙N溝道，指定功率MOSFET（雙?溝道邏輯電平功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 201K |
| 代理商： | ITF87008DQT |
5
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 14. SWITCHING TIME vs GATE RESISTANCE
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.90
1.00
1.10
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
0.95
1.05
100
1000
2000
0.1
1.0
10
20
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
1
2
3
4
5
0
3
6
9
12
V
G
,
V
DD
= 10V
Q
g
, GATE CHARGE (nC)
I
D
= 7A
I
D
= 1A
WAVEFORMS IN
DESCENDING ORDER:
400
500
600
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 2.5V, V
DD
= 10V, I
D
= 2A
t
d(OFF)
t
r
t
f
t
d(ON)
300
200
100
200
300
400
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 10V, I
D
= 7A
t
d(OFF)
t
r
t
d(ON)
t
f
100
ITF87008DQT
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