參數(shù)資料
型號: ITF86172SK8T
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET
中文描述: 30 V, 0.026 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝: PLASTIC, SO-8
文件頁數(shù): 4/12頁
文件大小: 174K
代理商: ITF86172SK8T
4
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
-10
-60
-1
-10
-500
-1
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DS(ON)
LIMITED BY r
OPERATION IN THIS
T
J
= MAX RATED
T
A
= 25
C
SINGLE PULSE
-100
R
θ
JA
= 50
o
C/W
0
-10
-20
-30
-40
-1.5
-2.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
-2.5
-3.0
-3.5
I
D
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= -55
o
C
-10
-20
-30
-40
0
-0.5
-1.0
-1.5
0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -3V
T
A
= 25
o
C
V
GS
= -3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -5V
V
GS
= -4.5V
V
GS
= -4V
V
GS
= -10V
I
D
= -2A
10
15
30
-2
-4
-6
-8
-10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -10A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-3
-5
-7
-9
20
25
0.5
0.6
1.0
1.4
1.6
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= -10V, I
D
= -10A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.8
1.2
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= -250
μ
A
T
ITF86172SK8T
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