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參數(shù)資料
| 型號(hào)： | ITF86172SK8T |
| 廠商： | INTERSIL CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET |
| 中文描述： | 30 V, 0.026 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 174K |
| 代理商： | ITF86172SK8T |
2
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
I
D
= 250
μ
A, V
GS
= 0V Figure 11
V
DS
= -30V, V
GS
= 0V
V
GS
=
±
20V
-30
-
-
V
Zero Gate Voltage Drain Current
-
-
-1
μ
A
Gate to Source Leakage Current
-
-
±
10
uA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250
μ
A Figure 10
I
D
= 10.0A, V
GS
= -10V Figures 8,9
I
D
= 5.0A, V
GS
= -4.5V Figure 8
I
D
= 5.0A, V
GS
= -4.0V Figure 8
-1.0
-
-2.5
V
Drain to Source On Resistance
-
0.0125
0.016
-
0.017
0.023
-
0.019
0.026
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Ambi-
ent
R
θ
JA
Pad Area = 0.76 in
2
(490.3 mm
2
) (Note 2)
Pad Area = 0.054 in
2
(34.8 mm
2
) Figure 20
Pad Area = 0.0115 in
2
(7.42 mm
2
) Figure 20
-
-
50
o
C/W
o
C/W
o
C/W
-
-
152
-
-
189
SWITCHING SPECIFICATIONS
(V
GS
= -4.5V)
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
DD
= -15V, I
D
= 5.0A
V
GS
=
-4.5V,
R
GS
= 7.5
Figures 14, 18, 19
-
20
-
ns
Rise Time
-
87
-
ns
Turn-Off Delay Time
-
48
-
ns
Fall Time
-
62
-
ns
SWITCHING SPECIFICATIONS
(V
GS
= -10V)
Turn-On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
DD
= -15V, I
D
= 10.0A
V
GS
=
-10V,
R
GS
= 7.5
Figures 15, 18, 19
-
12
-
ns
Rise Time
-
81
-
ns
Turn-Off Delay Time
-
76
-
ns
Fall Time
-
80
-
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
Q
g(-5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to -10V
V
GS
= 0V to -5V
V
GS
= 0V to -1V
V
DD
= -15V,
I
D
= 8.0A,
I
g(REF)
= -1.0mA
Figures 13, 16, 17
-
38
-
nC
Gate Charge at -5V
-
22
-
nC
Threshold Gate Charge
-
2
-
nC
Gate to Source Gate Charge
-
6.8
-
nC
Gate to Drain “Miller” Charge
-
9.2
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
Figure 12
-
1930
-
pF
Output Capacitance
-
470
-
pF
Reverse Transfer Capacitance
-
215
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
t
rr
Q
RR
I
SD
= -8.0A
I
SD
= -8.0A, dI
SD
/dt = 100A/
μ
s
I
SD
= -8.0A, dI
SD
/dt = 100A/
μ
s
-
-0.8
-
V
Reverse Recovery Time
-
26
-
ns
Reverse Recovered Charge
-
13
-
nC
ITF86172SK8T
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