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參數(shù)資料
| 型號： | ISPLSI2032E-225LT48 |
| 廠商： | LATTICE SEMICONDUCTOR CORP |
| 元件分類： | PLD |
| 英文描述： | In-System Programmable SuperFAST⑩ High Density PLD |
| 中文描述： | EE PLD, 5.5 ns, PQFP48 |
| 封裝： | TQFP-48 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大小： | 173K |
| 代理商： | ISPLSI2032E-225LT48 |
Specifications
ispLSI 2032E
4
+ 5V
R1
R2
CL
*
Device
Output
Test
Point
*
CL includes Test Fixture and Probe Capacitance.
0213A
DC Electrical Characteristics
Over Recommended Operating Conditions
1
Output Load Conditions (see Figure 2)
TEST CONDITION
R1
470
∞
470
R2
390
390
390
CL
35pF
35pF
35pF
A
B
Active High
Active Low
Active High to Z
at
V
OH
C
470
390
5pF
∞
390
5pF
Active Low to Z
at
V
+0.5V
OL
Table 2 - 0004A
Input Pulse Levels
Table 2-0003/2032E
Input Rise and Fall Time 10% to 90%
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
GND to 3.0V
1.5 ns
1.5V
1.5V
See Figure 2
3-state levels are measured 0.5V from
steady-state active level.
Figure 2. Test Load
V
OL
V
OH
I
IL
SYMBOL
1. One output at a time for a maximum duration of one second (V
OUT
= 0.5V). Characterized, but not 100% tested.
2. Meaured using two 16-bit counters.
3. Typical values are at V
CC
= 5V and T
A
= 25
°
C.
4. Unused inputs held at 0.0V.
5. Available in 48-pin package only.
6. Maximum I
CC
varies widely with specific device configuration and operating frequency. Refer to the
Power Consumption section of this data sheet and the Thermal Management section of the Lattice Semiconductor
Data Book or CD-ROM to estimate maximum I
CC
.
Table 2-0007/2032E
I
IH
PARAMETER
I
IL-PU
I
OS
1
I
CC
2,4,6
Output Low Voltage
Output High Voltage
Input or I/O Low Leakage Current
I/O Active Pull-Up Current, non-PCI
I/O Active Pull-Up Current, PCI
5
Output Short Circuit Current, non-PCI
Output Short Circuit Current, PCI
5
Operating Power Supply Current
I
OL
= 8 mA
I
OH
= -4 mA
0V
≤
V
IN
≤
V
IL
(Max.)
(V
CCIO
- 0.2)V
≤
V
IN
≤
V
CCIO
0V
≤
V
IN
≤
2.0V
0V
≤
V
IN
≤
2.0V
V
CCIO
= 5V, V
OUT
= 0.5V
V
CCIO
= 5.0V or 3.3V, V
OUT
= 0.5V
V
IL
= 0.0V, V
IH
= 3.0V
f
TOGGLE
= 1 MHz
CONDITION
MIN.
–
2.4
–
TYP.
3
–
–
–
MAX.
0.4
–
-10
UNITS
V
V
μ
A
–
–
-10
–
–
–
–
–
–
–
–
85
10
10
-150
-200
-240
–
μ
A
μ
A
μ
A
μ
A
mA
mA
mA
Input or I/O High Leakage Current
V
CCIO
≤
V
IN
≤
5.25V
-10
–
-250
–
65
-225/-200
Others
mA
–
Switching Test Conditions
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PDF描述 |
|---|---|
| IspLSI2032E-180LJ44 | In-System Programmable SuperFAST High Density PLD |
| ISPLSI2032E-180LT44 | In-System Programmable SuperFAST⑩ High Density PLD |
| IspLSI2032E-180LT44 | In-System Programmable SuperFAST High Density PLD |
| ISPLSI2032E-225LJ44 | Solderless Terminal RoHS Compliant: Yes |
| IspLSI2032E-225LJ44 | In-System Programmable SuperFAST High Density PLD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISPLSI2032LV60LJ | 制造商:LATTICE 功能描述:New |
| ISPLSI2032LV-60LJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Electrically-Erasable Complex PLD |
| ISPLSI2032LV-60LJI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Electrically-Erasable Complex PLD |
| ISPLSI2032LV-60LT44 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Electrically-Erasable Complex PLD |
| ISPLSI2032LV-60LT44I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Electrically-Erasable Complex PLD |
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