- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄383154 > ISL6532B (Intersil Corporation) PWM Control Circuit 16-SSOP 0 to 70 PDF資料下載
參數(shù)資料
| 型號(hào)： | ISL6532B |
| 廠商： | Intersil Corporation |
| 英文描述： | PWM Control Circuit 16-SSOP 0 to 70 |
| 中文描述： | ACPI的穩(wěn)壓器/雙通道DDR內(nèi)存控制器系統(tǒng) |
| 文件頁(yè)數(shù)： | 9/15頁(yè) |
| 文件大?。?/td> | 362K |
| 代理商： | ISL6532B |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)當(dāng)前第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)
9
V
TT
Over Current Protection
The internal V
TT
LDO is protected from fault conditions
through a 3.3A current limit. This current limit protects the
ISL6532B if the LDO is sinking or sourcing current. During
an overcurrent event on the V
TT
LDO, only the V
TT
LDO is
disabled. Once the over current condition on the V
TT
rail is
removed, V
TT
will recover.
Over/Under Voltage Protection
.
Both the internal V
TT
LDO and the V
DDQ
regulator are
protected from faults through internal Over/Under voltage
detection circuitry. If either rail falls below 85% of the targeted
voltage, then an undervoltage event is tripped. An under
voltage will disable all regulators for a period of 3 soft-start
cycles, after which a normal soft-start is initiated. If the output
remains under 85% of target, the regulators will continue to be
disabled and soft-started in a hiccup mode until the fault is
cleared. See Figure 3.
If either rail exceeds 115% of the targeted voltage, then all
outputs are immediately disabled. The ISL6532B will not re-
enable the outputs until either the bias voltage is toggled in
order to initiate a POR or the SLP_S5 signal is forced LOW
and then back to HIGH.
Thermal Protection (S0/S3 State)
If the ISL6532B IC junction temperature reaches a nominal
temperature of 140
o
C, all regulators will be disabled. The
ISL6532B will not re-enable the outputs until the junction
temperature drops below 110
o
C and either the bias voltage
is toggled in order to initiate a POR or the SLP_S5 signal is
forced LOW and then back to HIGH.
Shoot-Through Protection
A shoot-through condition occurs when both the upper and
lower MOSFETs are turned on simultaneously, effectively
shorting the input voltage to ground. To protect from a shoot-
through condition, the ISL6532B incorporates specialized
circuitry which insures that complementary MOSFETs are
not ON simultaneously.
The adaptive shoot-through protection utilized by the V
DDQ
regulator looks at the lower gate drive pin, LGATE, and the
upper gate drive pin, UGATE, to determine whether a
MOSFET is ON or OFF. If the voltage from UGATE or from
LGATE to GND is less than 0.8V, then the respective
MOSFET is defined as being OFF and the other MOSFET is
allowed to be turned ON. This method allows the V
DDQ
regulator to both source and sink current.
Since the voltage of the MOSFET gates are being measured
to determine the state of the MOSFET, the designer is
encouraged to consider the repercussions of introducing
external components between the gate drivers and their
respective MOSFET gates before actually implementing
such measures. Doing so may interfere with the shoot-
through protection.
Application Guidelines
Layout Considerations
Layout is very important in high frequency switching
converter design. With power devices switching efficiently at
250kHz, the resulting current transitions from one device to
another cause voltage spikes across the interconnecting
impedances and parasitic circuit elements. These voltage
FIGURE 2. TYPICAL S3 TO S0 STATE TRANSITION
V
TT
V
DDQ
500mV/DIV
12VATX 2V/DIV
S3
S5
500mV/DIV
PGOOD
5V/DIV
12V POR
PGOOD COMPARATOR
ENABLED
2048 CLOCK
CYCLES
V
T
TIME
T1
T0
T2
INTERNAL DELAY
DELAY INTERVAL
500mV/DIV
V
DDQ
V
TT
FIGURE 3. V
TT
/V
DDQ
LDO UNDER VOLTAGE PROTECTION
RESPONSES
ISL6532B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ISL6532BCR | PWM Control Circuit 16-SSOP 0 to 70 |
| ISL6532BCRZ | PWM Control Circuit 16-SOIC 0 to 70 |
| ISL6532CCRZ-T | R8C Series, 21 Group, WDTO 48P6Q-A |
| ISL6532C | PWM Control Circuit 16-SOIC 0 to 70 |
| ISL6532CCR | PWM Control Circuit 16-SOIC 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6532BCR | 功能描述:IC REG/CTRLR ACPI DUAL DDR 20QFN RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - 電源管理 - 專(zhuān)用 系列:- 應(yīng)用說(shuō)明:Ultrasound Imaging Systems Application Note 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:37 系列:- 應(yīng)用:醫(yī)療用超聲波成像，聲納 電流 - 電源:- 電源電壓:2.37 V ~ 6 V 工作溫度:0°C ~ 70°C 安裝類(lèi)型:表面貼裝 封裝/外殼:56-WFQFN 裸露焊盤(pán) 供應(yīng)商設(shè)備封裝:56-TQFN-EP（8x8） 包裝:管件 |
| ISL6532BCR-T | 功能描述:IC REG/CTRLR ACPI DUAL DDR 20QFN RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - 電源管理 - 專(zhuān)用 系列:- 應(yīng)用說(shuō)明:Ultrasound Imaging Systems Application Note 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:37 系列:- 應(yīng)用:醫(yī)療用超聲波成像，聲納 電流 - 電源:- 電源電壓:2.37 V ~ 6 V 工作溫度:0°C ~ 70°C 安裝類(lèi)型:表面貼裝 封裝/外殼:56-WFQFN 裸露焊盤(pán) 供應(yīng)商設(shè)備封裝:56-TQFN-EP（8x8） 包裝:管件 |
| ISL6532BCRZ | 功能描述:電壓模式 PWM 控制器 DL DDRG W/3ALDO FOR SPRINGDALE MBS 20 RoHS:否 制造商:Texas Instruments 輸出端數(shù)量:1 拓?fù)浣Y(jié)構(gòu):Buck 輸出電壓:34 V 輸出電流: 開(kāi)關(guān)頻率: 工作電源電壓:4.5 V to 5.5 V 電源電流:600 uA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 封裝 / 箱體:WSON-8 封裝:Reel |
| ISL6532BCRZ-T | 功能描述:電壓模式 PWM 控制器 DL DDRG W/3ALDO FOR SPRINGDALE MBS 20 RoHS:否 制造商:Texas Instruments 輸出端數(shù)量:1 拓?fù)浣Y(jié)構(gòu):Buck 輸出電壓:34 V 輸出電流: 開(kāi)關(guān)頻率: 工作電源電壓:4.5 V to 5.5 V 電源電流:600 uA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 封裝 / 箱體:WSON-8 封裝:Reel |
| ISL6532CCR | 功能描述:IC REG/CTRLR ACPI DUAL DDR 28QFN RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - 電源管理 - 專(zhuān)用 系列:- 應(yīng)用說(shuō)明:Ultrasound Imaging Systems Application Note 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:37 系列:- 應(yīng)用:醫(yī)療用超聲波成像，聲納 電流 - 電源:- 電源電壓:2.37 V ~ 6 V 工作溫度:0°C ~ 70°C 安裝類(lèi)型:表面貼裝 封裝/外殼:56-WFQFN 裸露焊盤(pán) 供應(yīng)商設(shè)備封裝:56-TQFN-EP（8x8） 包裝:管件 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。