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參數(shù)資料
| 型號： | ISL6208CRZ-T |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-PDIP -40 to 85 |
| 中文描述： | 4 A HALF BRDG BASED MOSFET DRIVER, PQCC8 |
| 封裝： | 3 X 3 MM, ROHS COMPLIANT, PLASTIC, MO-220, QFN-8 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 325K |
| 代理商： | ISL6208CRZ-T |
8
Diode Emulation
Diode emulation allows for higher converter efficiency under
light-load situations. With diode emulation active, the
ISL6208 will detect the zero current crossing of the output
inductor and turn off LGATE. This ensures that
discontinuous conduction mode (DCM) is achieved. Diode
emulation is asynchronous to the PWM signal. Therefore,
the ISL6208 will respond to the FCCM input immediately
after it changes state. Refer to the waveforms on page 7.
NOTE: Intersil does not recommend Diode Emulation use with
r
DS(ON)
current sensing topologies. The turn-OFF of the low side
MOSFET can cause gross current measurement inaccuracies.
Three-State PWM Input
A unique feature of the ISL6208 and other Intersil drivers is
the addition of a shutdown window to the PWM input. If the
PWM signal enters and remains within the shutdown window
for a set holdoff time, the output drivers are disabled and
both MOSFET gates are pulled and held low. The shutdown
state is removed when the PWM signal moves outside the
shutdown window. Otherwise, the PWM rising and falling
thresholds outlined in the ELECTRICAL SPECIFICATIONS
determine when the lower and upper gates are enabled.
Adaptive Shoot-Through Protection
Both drivers incorporate adaptive shoot-through protection
to prevent upper and lower MOSFETs from conducting
simultaneously and shorting the input supply. This is
accomplished by ensuring the falling gate has turned off one
MOSFET before the other is allowed to turn on.
During turn-off of the lower MOSFET, the LGATE voltage is
monitored until it reaches a 1V threshold, at which time the
UGATE is released to rise. Adaptive shoot-through circuitry
monitors the upper MOSFET gate-to-source voltage during
UGATE turn-off. Once the upper MOSFET gate-to-source
voltage has dropped below a threshold of 1V, the LGATE is
allowed to rise.
Internal Bootstrap Diode
This driver features an internal bootstrap Schottky diode.
Simply adding an external capacitor across the BOOT and
PHASE pins completes the bootstrap circuit.
The bootstrap capacitor must have a maximum voltage rating
above the maximum battery voltage plus 5V. The bootstrap
capacitor can be chosen from the following equation:
Q
BOOT
where Q
GATE
is the amount of gate charge required to fully
charge the gate of the upper MOSFET. The
V
BOOT
term is
defined as the allowable droop in the rail of the upper drive.
As an example, suppose an upper MOSFET has a gate
charge, Q
GATE
, of 25nC at 5V and also assume the droop in
the drive voltage over a PWM cycle is 200mV. One will find
that a bootstrap capacitance of at least 0.125
μ
F is required.
The next larger standard value capacitance is 0.15
μ
F. A
good quality ceramic capacitor is recommended.
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency and total gate charge of the selected
MOSFETs. Calculating the power dissipation in the driver for
a desired application is critical to ensuring safe operation.
Exceeding the maximum allowable power dissipation level
will push the IC beyond the maximum recommended
operating junction temperature of 125°C. The maximum
allowable IC power dissipation for the SO-8 package is
approximately 800mW. When designing the driver into an
application, it is recommended that the following calculation
be performed to ensure safe operation at the desired
frequency for the selected MOSFETs. The power dissipated
by the driver is approximated as:
where f
sw
is the switching frequency of the PWM signal. V
U
and V
L
represent the upper and lower gate rail voltage. Q
U
and Q
L
is the upper and lower gate charge determined by
MOSFET selection and any external capacitance added to
the gate pins. The lV
CC
V
CC
product is the quiescent power
of the driver and is typically negligible.
C
BOOT
-----------------------
≥
(EQ. 1)
FIGURE 8. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE
VOLTAGE
20nC
V
BOOT_CAP
(V)
C
B
(
2.0
1.6
1.4
1.0
0.8
0.6
0.4
0.2
0.0
0.3
0.0
0.1
0.2
0.4
0.5
0.6
0.9
0.7
0.8
1.0
Q
GATE
= 100nC
5nC
1.2
1.8
P
f
sw
1.5V
U
Q
U
V
L
Q
L
+
(
)
I
VCC
V
CC
+
=
(EQ. 2)
FIGURE 9. POWER DISSIPATION vs FREQUENCY
FREQUENCY (kHz)
0
100
200
300
400
500
600
700
800
900
1000
0
200
400
600
800
1000 1200 1400 1600 1800 2000
P
Q
U
=50nC
Q
L
=50nC
Q
U
=50nC
Q
L
=100nC
Q
U
=100nC
Q
L
=200nC
Q
U
=20nC
Q
L
=50nC
ISL6208
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|---|---|
| ISL6208CR-T | High Voltage Synchronous Rectified Buck MOSFET Driver |
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| ISL6209CB | High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6209CB-T | High Voltage Synchronous Rectified Buck MOSFET Driver |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6208IB | 制造商:Rochester Electronics LLC 功能描述: 制造商:Intersil Corporation 功能描述: |
| ISL6208IBZ | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:6,000 系列:* |
| ISL6208IBZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| ISL6208IR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6208IRZ | 功能描述:功率驅動器IC VER OF ISL6608IR -40 TO +100 RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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