參數(shù)資料
型號: ISL6208
廠商: Intersil Corporation
英文描述: High Voltage Synchronous Rectified Buck MOSFET Driver(高電壓,同步整流降壓MOSFET驅動器)
中文描述: 高電壓同步整流降壓MOSFET驅動器(高電壓,同步整流降壓MOSFET的驅動器)
文件頁數(shù): 3/10頁
文件大?。?/td> 1684K
代理商: ISL6208
3
FN9115.2
March 30, 2007
ti
Absolute Maximum Ratings
Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Input Voltage (V
FCCM
, V
PWM
). . . . . . . . . . . . . -0.3V to VCC + 0.3V
BOOT Voltage (V
BOOT-GND
). . . . . . . . . . . . . . . . . . . . .-0.3V to 33V
BOOT To PHASE Voltage (V
BOOT-PHASE
). . . . . . -0.3V to 7V (DC)
-0.3V to 9V (<10ns)
PHASE Voltage (Note 1) . . . . . . . . . . . . . . . . . . .GND - 0.3V to 30V
GND - 8V (<20ns Pulse Width, 10
μ
J)
UGATE Voltage . . . . . . . . . . . . . . . . V
PHASE
- 0.3V (DC) to V
BOOT
V
PHASE
- 5V (<20ns Pulse Width, 10
μ
J) to V
BOOT
LGATE Voltage . . . . . . . . . . . . . . . GND - 0.3V (DC) to VCC + 0.3V
GND - 2.5V (<20ns Pulse Width, 5
μ
J) to VCC + 0.3V
Ambient Temperature Range. . . . . . . . . . . . . . . . . .-40°C to +125°C
Recommended Operating Conditions
Ambient Temperature Range
. . . . . . . . . . . . . . . . . .-10
°
C to +100
°
C
Maximum Operating Junction Temperature. . . . . . . . . . . . . +125
°
C
Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
±
10
%
Thermal Resistance (Typical)
SOIC Package (Note 2) . . . . . . . . . . . .
QFN Package (Notes 3, 4). . . . . . . . . .
Maximum Junction Temperature (Plastic Package) . . . . . . .+150°C
Maximum Storage Temperature Range. . . . . . . . . .-65°C to +150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . .+300°C
(SOIC - Lead Tips Only)
θ
JA
(°C/W)
110
80
θ
JC
(°C/W)
n/a
15
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The Phase Voltage is capable of withstanding -7V when the BOOT pin is at GND.
2.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
3.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
4. For
θ
JC
, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
CC
SUPPLY CURRENT
Bias Supply Current
I
VCC
PWM pin floating, V
FCCM
= 5V
-
80
-
μ
A
POR
-
-
-
V
CC
Rising
-
3.40
3.90
V
V
CC
Falling
2.40
2.90
-
V
Hysteresis
-
500
-
mV
BOOTSTRAP DIODE
Forward Voltage
V
F
V
VCC
= 5V, forward bias current = 2mA
0.50
0.55
0.65
V
PWM INPUT
Input Current
I
PWM
V
PWM
= 5V
-
250
-
μ
A
V
PWM
= 0V
-
-250
-
μ
A
PWM Three-State Rising Threshold
V
VCC
= 5V
0.70
1.00
1.30
V
PWM Three-State Falling Threshold
V
VCC
= 5V
3.5
3.8
4.1
V
Three-State Shutdown Hold-off Time
t
TSSHD
V
VCC
= 5V, temperature = +25°C
100
175
250
ns
FCCM INPUT
FCCM LOW Threshold
0.50
-
-
V
FCCM HIGH Threshold
-
-
2.0
V
SWITCHING TIME
UGATE Rise Time (Note 5)
t
RU
V
VCC
= 5V, 3nF load
-
8.0
-
ns
LGATE Rise Time (Note 5)
t
RL
V
VCC
= 5V, 3nF load
-
8.0
-
ns
ISL6208
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