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參數(shù)資料
| 型號(hào)： | ISL55110 |
| 廠商： | Intersil Corporation |
| 英文描述： | Dual, High Speed MOSFET Driver |
| 中文描述： | 雙路，高速M(fèi)OSFET驅(qū)動(dòng)器 |
| 文件頁(yè)數(shù)： | 11/15頁(yè) |
| 文件大?。?/td> | 313K |
| 代理商： | ISL55110 |
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11
FN6228.1
March 21, 2007
Typical Performance Curves Discussion
RON
RON Source tested by placing device in Constant Drive High
Condition and connecting -50mA constant current source to
the Driver Output. Voltage Drop measured from VH to Driver
Output for RON calculations.
RON Sink tested by placing device in Constant Driver Low
Condition and connecting a +50mA constant current source.
Voltage Drop from Driver Out to Ground measured for RON
Calculations.
Dynamic Tests
All dynamic tests are conducted with ISL55110, ISL55111
Evaluation Board(s). Driver Loads are soldered to the
Evaluation board. Measurements are collected with P6245
Active Fet Probes and TDS5104 Oscilloscope. Pulse
Stimulus is provided by HP8131 pulse generator.
The ISL55110, ISL55111 Evaluation Boards provide Test
Point Fields for leadless connection to either an Active Fet
Probe or Differential probe. TP-IN fields are used for
monitoring pulse input stimulus. TP-OA/B monitor Driver
Output waveforms. C6 and C7 are the usual placement for
Driver loads. R3 and R4 are not populated and provided for
User-Specified, more complex load characterization.
Pin Skew
Pin Skew measurements are based on the difference in
propagation delay of the two channels. Measurements are
made on each channel from the 50% point on the stimulus
point to the 50% point on the driver output. The difference in
the propagation delay for Channel A and Channel B is
considered to be Skew.
Both Rising Propagation Delay and Falling Propagation
Delay are measured and reports as tSkewR and tSkewF.
50MHz Tests
50MHz Tests reported as No Load actually include
Evaluation board parasitics and a single TEK 6545 fet probe.
However no driver load components are installed, C6
through C9 and R3 through R6 are not populated.
General
Most dynamic measurements are presented in three ways.
First over temperature with a VDD of 3.6V and VH of 12.0V.
Second, at ambient with VH set to 12V and VDD data points
of 2.5V, 3.5V, 4.5V and 5.50V. Third, the ambient tests are
repeated with VDD of 3.3V and VH data points of 3V, 6V, 9V
and 12V.
ISL55110, ISL55111
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ISL55110IRZ | Dual, High Speed MOSFET Driver |
| ISL55110IVZ | Dual, High Speed MOSFET Driver |
| ISL55111 | Dual, High Speed MOSFET Driver |
| ISL55111IRZ | Dual, High Speed MOSFET Driver |
| ISL55111IVZ | Dual, High Speed MOSFET Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL55110_0712 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Dual, High Speed MOSFET Driver |
| ISL55110_11 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Dual, High Speed MOSFET Driver |
| ISL55110EVAL1Z | 功能描述:電源管理IC開發(fā)工具 ISL59532IKEZ32X32VID CROSPNT SNGL END IN RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類型:Battery Management 工具用于評(píng)估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V |
| ISL55110EVAL2Z | 功能描述:電源管理IC開發(fā)工具 ISL59534IKEZ32X16VID CROSPNT SNGL END IN RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類型:Battery Management 工具用于評(píng)估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V |
| ISL55110IRZ | 功能描述:功率驅(qū)動(dòng)器IC W/ANNEAL ULTRASOUND DRVR 16LD 4X4 RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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