17 FN6728.7 November 15, 2012 Small Outline Transistor Plastic Packages (SC70-5) D e
鍙冩暩(sh霉)璩囨枡
鍨嬭櫉(h脿o)锛� ISL28213FBZ
寤犲晢锛� Intersil
鏂囦欢闋佹暩(sh霉)锛� 9/23闋�
鏂囦欢澶�?銆�?/td> 0K
鎻忚堪锛� IC OPAMP GP RRIO 2MHZ DUAL 8SOIC
妯�(bi膩o)婧�(zh菙n)鍖呰锛� 97
鏀惧ぇ鍣ㄩ鍨嬶細 閫氱敤
闆昏矾鏁�(sh霉)锛� 2
杓稿嚭椤炲瀷锛� 婊挎摵骞�
杞�(zhu菐n)鎻涢€熺巼锛� 1 V/µs
澧炵泭甯跺绌嶏細 2MHz
闆绘祦 - 杓稿叆鍋忓锛� 3pA
闆诲 - 杓稿叆鍋忕Щ锛� 500µV
闆绘祦 - 闆绘簮锛� 90µA
闆绘祦 - 杓稿嚭 / 閫氶亾锛� 22mA
闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±)锛� 1.8 V ~ 5.5 V锛�±0.9 V ~ 2.5 V
宸ヤ綔婧害锛� -40°C ~ 125°C
瀹夎椤炲瀷锛� 琛ㄩ潰璨艰
灏佽/澶栨锛� 8-SOIC锛�0.154"锛�3.90mm 瀵級
渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁濓細 8-SOIC
鍖呰锛� 绠′欢
ISL28113, ISL28213, ISL28413
17
FN6728.7
November 15, 2012
Small Outline Transistor Plastic Packages (SC70-5)
D
e1
E
E1
C
L
C
L
e
b
C
L
A2
A
A1
C
L
0.20 (0.008)
M
0.10 (0.004)
C
-C-
SEATING
PLANE
4
5
12
3
VIEW C
L
R1
R
4X
胃1
4X
胃1
GAUGE PLANE
L1
SEATING
伪
L2
C
PLANE
c
BASE METAL
WITH
c1
b1
PLATING
b
0.4mm
0.75mm
0.65mm
2.1mm
TYPICAL RECOMMENDED LAND PATTERN
P5.049
5 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.031
0.043
0.80
1.10
-
A1
0.000
0.004
0.00
0.10
-
A2
0.031
0.039
0.80
1.00
-
b
0.006
0.012
0.15
0.30
-
b1
0.006
0.010
0.15
0.25
c
0.003
0.009
0.08
0.22
6
c1
0.003
0.009
0.08
0.20
6
D
0.073
0.085
1.85
2.15
3
E
0.071
0.094
1.80
2.40
-
E1
0.045
0.053
1.15
1.35
3
e
0.0256 Ref
0.65 Ref
-
e1
0.0512 Ref
1.30 Ref
-
L
0.010
0.018
0.26
0.46
4
L1
0.017 Ref.
0.420 Ref.
-
L2
0.006 BSC
0.15 BSC
伪
0o
8o
0o
8o
-
N5
5
R
0.004
-
0.10
-
R1
0.004
0.010
0.15
0.25
Rev. 3 7/07
NOTES:
1. Dimensioning and tolerances per ASME Y14.5M-1994.
2. Package conforms to EIAJ SC70 and JEDEC MO-203AA.
3. Dimensions D and E1 are exclusive of mold flash, protrusions, or gate
burrs.
4. Footlength L measured at reference to gauge plane.
5. 鈥淣鈥� is the number of terminal positions.
6. These Dimensions apply to the flat section of the lead between 0.08mm
and 0.15mm from the lead tip.
7. Controlling dimension: MILLIMETER. Converted inch dimensions
are for reference only.
鐩搁棞(gu膩n)PDF璩囨枡
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鐩搁棞(gu膩n)浠ｇ悊鍟�/鎶€琛�(sh霉)鍙冩暩(sh霉)
鍙冩暩(sh霉)鎻忚堪
ISL28213FBZ-T13 鍔熻兘鎻忚堪:IC OPAMP GP RRIO 2MHZ DUAL 8SOIC RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> Linear - Amplifiers - Instrumentation 绯诲垪:- 妯�(bi膩o)婧�(zh菙n)鍖呰:2,500 绯诲垪:MicroAmplifier™ 鏀惧ぇ鍣ㄩ鍨�:閫氱敤 闆昏矾鏁�(sh霉):2 杓稿嚭椤炲瀷:- 杞�(zhu菐n)鎻涢€熺巼:3.5 V/µs 澧炵泭甯跺绌�:1MHz -3db甯跺:- 闆绘祦 - 杓稿叆鍋忓:5pA 闆诲 - 杓稿叆鍋忕Щ:1500µV 闆绘祦 - 闆绘簮:220µA 闆绘祦 - 杓稿嚭 / 閫氶亾:60mA 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±):4.5 V ~ 36 V锛�±2.25 V ~ 18 V 宸ヤ綔婧害:-40°C ~ 85°C 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:8-SOIC锛�0.154"锛�3.90mm 瀵級 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�:8-SOIC 鍖呰:甯跺嵎 (TR)
ISL28213FBZ-T7 鍔熻兘鎻忚堪:IC OPAMP GP RRIO 2MHZ DUAL 8SOIC RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> Linear - Amplifiers - Instrumentation 绯诲垪:- 妯�(bi膩o)婧�(zh菙n)鍖呰:2,500 绯诲垪:MicroAmplifier™ 鏀惧ぇ鍣ㄩ鍨�:閫氱敤 闆昏矾鏁�(sh霉):2 杓稿嚭椤炲瀷:- 杞�(zhu菐n)鎻涢€熺巼:3.5 V/µs 澧炵泭甯跺绌�:1MHz -3db甯跺:- 闆绘祦 - 杓稿叆鍋忓:5pA 闆诲 - 杓稿叆鍋忕Щ:1500µV 闆绘祦 - 闆绘簮:220µA 闆绘祦 - 杓稿嚭 / 閫氶亾:60mA 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±):4.5 V ~ 36 V锛�±2.25 V ~ 18 V 宸ヤ綔婧害:-40°C ~ 85°C 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:8-SOIC锛�0.154"锛�3.90mm 瀵級 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�:8-SOIC 鍖呰:甯跺嵎 (TR)
ISL28213FHZ 鍒堕€犲晢:INTERSIL 鍒堕€犲晢鍏ㄧū:Intersil Corporation 鍔熻兘鎻忚堪:Single, Dual, Quad General Purpose Micropower,RRIO Operational Amplifier
ISL28213FHZ-T7 鍔熻兘鎻忚堪:閬�(y霉n)绠楁斁澶у櫒 - 閬�(y霉n)鏀� ISL28213FHZ Pb-Free Dual General Purpose Micropower, RRIO Op RoHS:鍚� 鍒堕€犲晢:STMicroelectronics 閫氶亾鏁�(sh霉)閲�:4 鍏辨ā鎶戝埗姣旓紙鏈€灏忓€硷級:63 dB 杓稿叆瑁�(b菙)鍎熼浕澹�:1 mV 杓稿叆鍋忔祦锛堟渶澶у€硷級:10 pA 宸ヤ綔闆绘簮闆诲:2.7 V to 5.5 V 瀹夎棰�(f膿ng)鏍�:SMD/SMT 灏佽 / 绠遍珨:QFN-16 杞�(zhu菐n)鎻涢€熷害:0.89 V/us 闂�(gu膩n)闁�:No 杓稿嚭闆绘祦:55 mA 鏈€澶у伐浣滄韩搴�:+ 125 C 灏佽:Reel
ISL28213FHZ-T7A 鍔熻兘鎻忚堪:閬�(y霉n)绠楁斁澶у櫒 - 閬�(y霉n)鏀� ISL28213FHZ Pb-Free Dual General Purpose Micropower, RRIO Op RoHS:鍚� 鍒堕€犲晢:STMicroelectronics 閫氶亾鏁�(sh霉)閲�:4 鍏辨ā鎶戝埗姣旓紙鏈€灏忓€硷級:63 dB 杓稿叆瑁�(b菙)鍎熼浕澹�:1 mV 杓稿叆鍋忔祦锛堟渶澶у€硷級:10 pA 宸ヤ綔闆绘簮闆诲:2.7 V to 5.5 V 瀹夎棰�(f膿ng)鏍�:SMD/SMT 灏佽 / 绠遍珨:QFN-16 杞�(zhu菐n)鎻涢€熷害:0.89 V/us 闂�(gu膩n)闁�:No 杓稿嚭闆绘祦:55 mA 鏈€澶у伐浣滄韩搴�:+ 125 C 灏佽:Reel
鐧�(f膩)甯冪穵鎬ラ噰璩硷紝3鍒嗛悩宸﹀彸鎮ㄥ皣寰楀埌鍥炲京(f霉)銆�

閲囪臣闇€姹�

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鐧�(f膩)甯冩垚鍔�锛佹偍鍙互绻肩簩(x霉)鐧�(f膩)甯冮噰璩笺€備篃鍙互閫�(j矛n)鍏ユ垜鐨勫悗鑷�(t谩i)锛屾煡鐪嬪牨(b脿o)鍍�(ji脿)

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*鍨嬭櫉(h脿o) *鏁�(sh霉)閲� 寤犲晢 鎵硅櫉(h脿o) 灏佽
娣诲姞鏇村閲囪臣

鎴戠殑鑱�(li谩n)绯绘柟寮�

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