12 FN6728.7 November 15, 2012 * source ISL28113_SPICEmodel * Revision D, LaFontaine February 22, 2010 Improved noi" />
鍙冩暩(sh霉)璩囨枡
鍨嬭櫉(h脿o)锛� ISL28213FBZ
寤犲晢锛� Intersil
鏂囦欢闋佹暩(sh霉)锛� 4/23闋�
鏂囦欢澶�?銆�?/td> 0K
鎻忚堪锛� IC OPAMP GP RRIO 2MHZ DUAL 8SOIC
妯�(bi膩o)婧�(zh菙n)鍖呰锛� 97
鏀惧ぇ鍣ㄩ鍨嬶細 閫氱敤
闆昏矾鏁�(sh霉)锛� 2
杓稿嚭椤炲瀷锛� 婊挎摵骞�
杞�(zhu菐n)鎻涢€熺巼锛� 1 V/µs
澧炵泭甯跺绌嶏細 2MHz
闆绘祦 - 杓稿叆鍋忓锛� 3pA
闆诲 - 杓稿叆鍋忕Щ锛� 500µV
闆绘祦 - 闆绘簮锛� 90µA
闆绘祦 - 杓稿嚭 / 閫氶亾锛� 22mA
闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±)锛� 1.8 V ~ 5.5 V锛�±0.9 V ~ 2.5 V
宸ヤ綔婧害锛� -40°C ~ 125°C
瀹夎椤炲瀷锛� 琛ㄩ潰璨艰
灏佽/澶栨锛� 8-SOIC锛�0.154"锛�3.90mm 瀵級
渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁濓細 8-SOIC
鍖呰锛� 绠′欢
ISL28113, ISL28213, ISL28413
12
FN6728.7
November 15, 2012
* source ISL28113_SPICEmodel
* Revision D, LaFontaine February 22, 2010 Improved noise
performance
* Model for Noise, supply currents, CMRR 72dB f=35kHz, AVOL
85dB f=100Hz
* SR = 1.0V/us, GBWP 2MHz, 2nd pole 3MHz Output voltage clamp
and short ckt I limit
*Copyright 2009 by Intersil Corporation
*Refer to data sheet 鈥淟ICENSE STATEMENT鈥� Use of
*this model indicates your acceptance with the
*terms and provisions in the License Statement.
* Connections:
+input
*
|
-input
*
|
+Vsupply
*
|
-Vsupply
*
|
output
*
|
.subckt ISL28113subckt
Vin+
Vin-
V+
V-
VOUT
* source ISL28113_DS rev1
*
*Voltage Noise
E_En
VIN+ EN 28 0 1
D_D13
29 28 DN
V_V9
29 0 0.45
R_R21
28 0 30
*
*Input Stage
M_M14
3 1 5 5 NCHANNELMOSFET
M_M15
4 VIN- 6 6 NCHANNELMOSFET
M_M16
11 VIN- 9 9 PMOSISIL
M_M17
12 1 10 10 PMOSISIL
I_I1
7 V-- DC 5e-3
I_I2
V++ 8 DC 5e-3
I_IOS
VIN- 1 DC 25e-12
G_G1A
V++ 14 4 3 1404
G_G2A
V-- 14 11 12 1404
V_V1
V++ 2 1e-6
V_V2
13 V-- 1e-6
R_R1
3 2 1.0004
R_R2
4 2 1.0004
R_R3
5 7 10
R_R4
7 6 10
R_R5
9 8 10
R_R6
8 10 10
R_R7
13 11 1
R_R8
13 12 1
R_RA1
14 V++ 1
R_RA2
V-- 14 1
C_CinDif
VIN- EN 1.02E-12
C_Cin1
V-- EN 1.26e-12
C_Cin2
V-- VIN- 1.26e-12
*
*1st Gain Stage
G_G1
V++ 16 15 VMID 334.753e-3
G_G2
V-- 16 15 VMID 334.753e-3
V_V3
17 16 .61
V_V4
16 18 .61
D_D1
15 VMID DX
D_D2
VMID 15 DX
D_D3
17 V++ DX
D_D4
V-- 18 DX
R_R9
15 14 100
R_R10
15 VMID 1e9
R_R11
16 V++ 1
R_R12
V-- 16 1
*
*2nd Gain Stage
G_G3
V++ VG 16 VMID 24.893e-3
G_G4
V-- VG 16 VMID 24.893e-3
V_V5
19 VG .604
V_V6
VG 20 .604
D_D5
19 V++ DX
D_D6
V-- 20 DX
R_R13
VG V++ 318.329e3
R_R14
V-- VG 318.329e3
C_C2
VG V++ 5E-09
C_C3
V-- VG 5E-09
*
*Mid supply Ref
E_E4
VMID V-- V++ V-- 0.5
E_E2
V++ 0 V+ 0 1
E_E3
V-- 0 V- 0 1
I_ISY
V+ V- DC 90e-6
*
*Common Mode Gain Stage with Zero
G_G5
V++ VC VCM VMID 0.25118
G_G6
V-- VC VCM VMID 0.25118
E_EOS
1 EN VC VMID 1
R_R15
VC 21 0.001
R_R16
22 VC 0.001
R_R22
EN VCM 5e11
R_R23
VCM VIN- 5e11
L_L1
21 V++ 4.547418E-09
L_L2
22 V-- 4.547418E-09
*
*Pole Stage
G_G7
V++ 23 VG VMID 0.18849
G_G8
V-- 23 VG VMID 0.18849
R_R17
23 V++ 5.30532
R_R18
V-- 23 5.30532
C_C4
23 V++ 1e-8
C_C5
V-- 23 1e-8
*
*Output Stage with Correction Current Sources
G_G9
26 V-- VOUT 23 0.02
G_G10
27 V-- 23 VOUT 0.02
G_G11
VOUT V++ V++ 23 0.02
G_G12
V-- VOUT 23 V-- 0.02
V_V7
24 VOUT .08
V_V8
VOUT 25 .08
D_D7
23 24 DX
D_D8
25 23 DX
D_D9
V++ 26 DX
D_D10
V++ 27 DX
D_D11
V-- 26 DY
D_D12
V-- 27 DY
R_R19
VOUT V++ 50
R_R20
V-- VOUT 50
.model pmosisil pmos (kp=16e-3 vto=-0.6)
.model NCHANNELMOSFET nmos (kp=3e-3 vto=0.6)
.model DN D(KF=6.69e-9 AF=1)
.MODEL DX D(IS=1E-12 Rs=0.1)
.MODEL DY D(IS=1E-15 BV=50 Rs=1)
.ends ISL28113subckt
FIGURE 22. SPICE NET LIST
鐩搁棞(gu膩n)PDF璩囨枡
PDF鎻忚堪
5KP90A-G TVS 5000W 90V UNI/DIR R-6
5KP9.0CA-G TVS 5000W 9.0V BIDIR R-6
160834-2 CONN RCPT/TAB PIDG FASTON RED
961125-5900-AR-TP CONN HEADER R/A 25POS GOLD SMD
75160-318-02 HDR STR SR. 100 TP
鐩搁棞(gu膩n)浠ｇ悊鍟�/鎶€琛�(sh霉)鍙冩暩(sh霉)
鍙冩暩(sh霉)鎻忚堪
ISL28213FBZ-T13 鍔熻兘鎻忚堪:IC OPAMP GP RRIO 2MHZ DUAL 8SOIC RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> Linear - Amplifiers - Instrumentation 绯诲垪:- 妯�(bi膩o)婧�(zh菙n)鍖呰:2,500 绯诲垪:MicroAmplifier™ 鏀惧ぇ鍣ㄩ鍨�:閫氱敤 闆昏矾鏁�(sh霉):2 杓稿嚭椤炲瀷:- 杞�(zhu菐n)鎻涢€熺巼:3.5 V/µs 澧炵泭甯跺绌�:1MHz -3db甯跺:- 闆绘祦 - 杓稿叆鍋忓:5pA 闆诲 - 杓稿叆鍋忕Щ:1500µV 闆绘祦 - 闆绘簮:220µA 闆绘祦 - 杓稿嚭 / 閫氶亾:60mA 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±):4.5 V ~ 36 V锛�±2.25 V ~ 18 V 宸ヤ綔婧害:-40°C ~ 85°C 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:8-SOIC锛�0.154"锛�3.90mm 瀵級 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�:8-SOIC 鍖呰:甯跺嵎 (TR)
ISL28213FBZ-T7 鍔熻兘鎻忚堪:IC OPAMP GP RRIO 2MHZ DUAL 8SOIC RoHS:鏄� 椤炲垾:闆嗘垚闆昏矾 (IC) >> Linear - Amplifiers - Instrumentation 绯诲垪:- 妯�(bi膩o)婧�(zh菙n)鍖呰:2,500 绯诲垪:MicroAmplifier™ 鏀惧ぇ鍣ㄩ鍨�:閫氱敤 闆昏矾鏁�(sh霉):2 杓稿嚭椤炲瀷:- 杞�(zhu菐n)鎻涢€熺巼:3.5 V/µs 澧炵泭甯跺绌�:1MHz -3db甯跺:- 闆绘祦 - 杓稿叆鍋忓:5pA 闆诲 - 杓稿叆鍋忕Щ:1500µV 闆绘祦 - 闆绘簮:220µA 闆绘祦 - 杓稿嚭 / 閫氶亾:60mA 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±):4.5 V ~ 36 V锛�±2.25 V ~ 18 V 宸ヤ綔婧害:-40°C ~ 85°C 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:8-SOIC锛�0.154"锛�3.90mm 瀵級 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁�:8-SOIC 鍖呰:甯跺嵎 (TR)
ISL28213FHZ 鍒堕€犲晢:INTERSIL 鍒堕€犲晢鍏ㄧū:Intersil Corporation 鍔熻兘鎻忚堪:Single, Dual, Quad General Purpose Micropower,RRIO Operational Amplifier
ISL28213FHZ-T7 鍔熻兘鎻忚堪:閬�(y霉n)绠楁斁澶у櫒 - 閬�(y霉n)鏀� ISL28213FHZ Pb-Free Dual General Purpose Micropower, RRIO Op RoHS:鍚� 鍒堕€犲晢:STMicroelectronics 閫氶亾鏁�(sh霉)閲�:4 鍏辨ā鎶戝埗姣旓紙鏈€灏忓€硷級:63 dB 杓稿叆瑁�(b菙)鍎熼浕澹�:1 mV 杓稿叆鍋忔祦锛堟渶澶у€硷級:10 pA 宸ヤ綔闆绘簮闆诲:2.7 V to 5.5 V 瀹夎棰�(f膿ng)鏍�:SMD/SMT 灏佽 / 绠遍珨:QFN-16 杞�(zhu菐n)鎻涢€熷害:0.89 V/us 闂�(gu膩n)闁�:No 杓稿嚭闆绘祦:55 mA 鏈€澶у伐浣滄韩搴�:+ 125 C 灏佽:Reel
ISL28213FHZ-T7A 鍔熻兘鎻忚堪:閬�(y霉n)绠楁斁澶у櫒 - 閬�(y霉n)鏀� ISL28213FHZ Pb-Free Dual General Purpose Micropower, RRIO Op RoHS:鍚� 鍒堕€犲晢:STMicroelectronics 閫氶亾鏁�(sh霉)閲�:4 鍏辨ā鎶戝埗姣旓紙鏈€灏忓€硷級:63 dB 杓稿叆瑁�(b菙)鍎熼浕澹�:1 mV 杓稿叆鍋忔祦锛堟渶澶у€硷級:10 pA 宸ヤ綔闆绘簮闆诲:2.7 V to 5.5 V 瀹夎棰�(f膿ng)鏍�:SMD/SMT 灏佽 / 绠遍珨:QFN-16 杞�(zhu菐n)鎻涢€熷害:0.89 V/us 闂�(gu膩n)闁�:No 杓稿嚭闆绘祦:55 mA 鏈€澶у伐浣滄韩搴�:+ 125 C 灏佽:Reel
鐧�(f膩)甯冪穵鎬ラ噰璩�锛�3鍒嗛悩宸﹀彸鎮ㄥ皣寰楀埌鍥炲京(f霉)銆�

閲囪臣闇€姹�

(鑻ュ彧閲囪臣涓€姊濆瀷铏�(h脿o)锛屽～瀵竴琛屽嵆鍙�)

鐧�(f膩)甯冩垚鍔燂紒鎮ㄥ彲浠ョ辜绾�(x霉)鐧�(f膩)甯冮噰璩�銆備篃鍙互閫�(j矛n)鍏ユ垜鐨勫悗鑷�(t谩i)锛屾煡鐪嬪牨(b脿o)鍍�(ji脿)

鐧�(f膩)甯冩垚鍔�锛佹偍鍙互绻肩簩(x霉)鐧�(f膩)甯冮噰璩笺€備篃鍙互閫�(j矛n)鍏ユ垜鐨勫悗鑷�(t谩i)锛屾煡鐪嬪牨(b脿o)鍍�(ji脿)

*鍨嬭櫉(h脿o) *鏁�(sh霉)閲� 寤犲晢 鎵硅櫉(h脿o) 灏佽
娣诲姞鏇村閲囪臣

鎴戠殑鑱�(li谩n)绯绘柟寮�

*
*
*
    • 鎴�
    • 閲囪喘
    • 鎼滅储
    • 浼氬憳