參數(shù)資料
型號: ISL22446
廠商: Intersil Corporation
英文描述: Low Noise, Low Power, SPI Bus, 128 Taps(低噪聲,低功率,SPI總線, 128抽頭電位器)
中文描述: 低噪聲,低功耗,SPI總線,128絲錐(低噪聲,低功率和SPI總線,128抽頭電位器)
文件頁數(shù): 4/13頁
文件大?。?/td> 465K
代理商: ISL22446
4
FN6181.0
July 17, 2006
RDNL
(Note 15)
Differential non-linearity
DCP register set between 10h and 7Fh;
monotonic over all tap positions
-0.5
0.5
MI
(Note 13)
Roffset
(Note 14)
Offset
W option
0
1
7
MI
(Note 13)
U option
0
0.5
2
MI
(Note 13)
R
MATCH
(Note 17)
DCP to DCP matching
Any two DCPs at the same tap position with
the same terminal voltages
-2
2
MI
(Note 13)
Analog Specifications
Over recommended operating conditions unless otherwise stated.
(Continued)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
(NOTE 5)
MAX
UNIT
Operating Specifications
Over the recommended operating conditions unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
(NOTE 5)
MAX
UNIT
I
CC1
V
CC
supply current (volatile
write/read)
f
SCK
= 5MHz; (for SPI Active, Read and
Volatile Write states only)
0.5
mA
I
CC2
V
CC
supply current (non-volatile
write/read)
f
SCK
= 5MHz; (for SPI Active, Read and
Non-volatile Write states only)
3
mA
I
SB
V
CC
current (standby)
V
CC
= +5.5V @ +85°C, SPI interface in
standby state
5
μA
V
CC
= +5.5V @ +125°C, SPI interface in
standby state
7
μA
V
CC
= +3.6V @ +85°C, SPI interface in
standby state
3
μA
V
CC
= +3.6V @ +125°C, SPI interface in
standby state
5
μA
I
SD
V
CC
current (shutdown)
V
CC
= +5.5V @ +85°C, SPI interface in
standby state
3
μA
V
CC
= +5.5V @ +125°C, SPI interface in
standby state
5
μA
V
CC
= +3.6V @ +85°C, SPI interface in
standby state
2
μA
V
CC
= +3.6V @ +125°C, SPI interface in
standby state
4
μA
I
LkgDig
Leakage current at pins SHDN, SCK,
SDI, SDO and CS
Voltage at pin from GND to V
CC
-1
1
μA
t
WRT
(Note 21)
Wiper Response Time after SPI write
to WR register
1.5
μs
t
ShdnRec
(Note 21)
DCP recall time from shutdown mode
From rising edge of SHDN signal to wiper
stored position and RH connection
1.5
μs
SCK rising edge of last bit of ACR data byte
to wiper stored position and RH connection
1.5
μs
Vpor
Power-on recall voltage
Minimum V
CC
at which memory recall occurs
2.0
2.6
V
VccRamp
Vcc ramp rate
0.2
V/ms
t
D
Power-up delay
V
CC
above Vpor, to DCP Initial Value
Register recall completed, and SPI Interface
in standby state
3
ms
EEPROM SPECIFICATION
EEPROM Endurance
1,000,000
Cycles
EEPROM Retention
Temperature T <55°C
50
Years
ISL22446
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