參數(shù)資料
型號(hào)： IS41C16256-60K
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
中文描述： 256K X 16 EDO DRAM, 60 ns, PDSO40
封裝： 0.400 INCH, MS-027, SOJ-40
文件頁(yè)數(shù)： 8/20頁(yè)
文件大?。?/td> 215K
代理商： IS41C16256-60K
IS41C16256
IS41LV16256
8
Integrated Circuit Solution Inc.
DR001-0E 01/25/2002
AC CHARACTERISTICS
(Continued)
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-25
-35
-50
-60
Symbol
Parameter
Min. Max.
Min. Max.
Min. Max.
Min. Max. Units
t
ACH
Column-Address Setup Time to
CAS
Precharge during WRITE Cycle
OE
Hold Time from
WE
during
READ-MODIFY-WRITE cycle
(18)
Data-In Setup Time
(15, 22)
Data-In Hold Time
(15, 22)
READ-MODIFY-WRITE Cycle Time
RAS
to
WE
Delay Time during
READ-MODIFY-WRITE Cycle
(14)
CAS
to
WE
Delay Time
(14, 20)
Column-Address to
WE
Delay Time
(14)
EDO Page Mode READ or WRITE
Cycle Time
(24)
RAS
Pulse Width in EDO Page Mode
Access Time from
CAS
Precharge
(15)
EDO Page Mode READ-WRITE
Cycle Time
(24)
Data Output Hold after
CAS
LOW
Output Buffer Turn-Off Delay from
CAS
or
RAS
(13,15,19, 29)
Output Disable Delay from
WE
Last
CAS
going LOW to First
CAS
returning HIGH
(23)
CAS
Setup Time (CBR REFRESH)
(30, 20)
CAS
Hold Time (CBR REFRESH)
(30, 21)
OE
Setup Time prior to
RAS
during
HIDDEN REFRESH Cycle
Refresh Period (512 Cycles)
Transition Time (Rise or Fall)
(2, 3)
15
—
15
—
15
—
15
—
ns
t
OEH
5
—
8
—
10
—
15
—
ns
t
DS
t
DH
t
RWC
t
RWD
0
5
—
—
—
—
0
6
—
—
—
—
0
8
—
—
—
—
0
10
140
80
—
—
—
—
ns
ns
ns
ns
65
35
80
45
125
70
t
CWD
t
AWD
t
PC
17
21
10
—
—
—
25
30
12
—
—
—
34
42
20
—
—
—
36
49
25
—
—
—
ns
ns
ns
t
RASP
t
CPA
t
PRWC
25
—
32
100K
14
—
35
—
40
100K
21
—
50
—
47
100K
27
—
50
—
56
100K
34
—
ns
ns
ns
t
COH
t
OFF
5
3
—
15
5
3
—
15
5
3
—
15
5
3
—
15
ns
ns
t
WHZ
t
CLCH
3
10
15
—
3
10
15
—
3
10
15
—
3
10
15
—
ns
ns
t
CSR
t
CHR
t
ORD
5
7
0
—
—
—
8
8
0
—
—
—
10
10
0
—
—
—
10
10
0
—
—
—
ns
ns
ns
t
REF
t
T
—
1
8
50
—
1
8
50
—
1
8
50
—
1
8
50
ms
ns
AC TEST CONDITIONS
Output load:
Two TTL Loads and 50 pF (Vcc = 5.0V
±
10%)
One TTL Load and 50 pF (Vcc = 3.3V
±
10%)
Input timing reference levels: V
IH
= 2.4V, V
IL
= 0.8V (Vcc = 5.0V
±
10%);
V
IH
= 2.0V, V
IL
= 0.8V (Vcc = 3.3V
±
10%)
Output timing reference levels: V
OH
= 2.0V, V
OL
= 0.8V (Vcc = 5V
±
10%, 3.3V
±
10%)
相關(guān)PDF資料
PDF描述
IS41C16256-60KI 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256-60T 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256-60TI 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C1664-30T 64K x 16 bit Dynamic RAM with EDO Page Mode
IS41C4100-35T 1Mx4 bit Dynamic RAM with EDO Page Mode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS41C16256-60KI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256-60T 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256-60TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256C 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4Mb DRAM WITH EDO PAGE MODE
IS41C16256C-35TLI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 4M, 5V, EDO 動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 35ns, 40 pin TSOP II RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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