參數(shù)資料
型號(hào)： IS41C16256-60K
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
中文描述： 256K X 16 EDO DRAM, 60 ns, PDSO40
封裝： 0.400 INCH, MS-027, SOJ-40
文件頁(yè)數(shù)： 3/20頁(yè)
文件大?。?/td> 215K
代理商： IS41C16256-60K
IS41C16256
IS41LV16256
Integrated Circuit Solution Inc.
DR001-0E 01/25/2002
3
TRUTH TABLE
Function
Standby
Read: Word
Read: Lower Byte
RAS
H
L
L
LCAS
H
L
L
UCAS
H
L
H
WE
X
H
H
OE
X
L
L
Address t
R
/t
C
X
ROW/COL
ROW/COL
I/O
High-Z
D
OUT
Lower Byte, D
OUT
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, D
OUT
D
IN
Lower Byte, D
IN
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, D
IN
D
OUT
, D
IN
D
OUT
D
OUT
D
OUT
D
IN
D
IN
D
OUT
, D
IN
D
OUT
, D
IN
D
OUT
D
OUT
High-Z
High-Z
Read: Upper Byte
L
H
L
H
L
ROW/COL
Write: Word (Early Write)
Write: Lower Byte (Early Write)
L
L
L
L
L
H
L
L
X
X
ROW/COL
ROW/COL
Write: Upper Byte (Early Write)
L
H
L
L
X
ROW/COL
Read-Write
(1,2)
EDO Page-Mode Read
(2)
L
L
L
L
L
L
L
L
L
L
H
→
L
H
H
H
L
L
H
→
L
H
→
L
H
L
X
X
L
→
H
L
L
L
X
X
L
→
H
L
→
H
L
X
X
X
ROW/COL
ROW/COL
NA/COL
NA/NA
ROW/COL
NA/COL
ROW/COL
NA/COL
ROW/COL
ROW/COL
ROW/NA
X
1st Cycle:
2nd Cycle:
Any Cycle:
1st Cycle:
2nd Cycle:
1st Cycle:
2nd Cycle:
Read L
→
H
→
L
Write L
→
H
→
L
H
→
L
H
→
L
L
→
H
H
→
L
H
→
L
H
→
L
H
→
L
L
L
H
L
H
→
L
H
→
L
L
→
H
H
→
L
H
→
L
H
→
L
H
→
L
L
L
H
L
EDO Page-Mode Write
(1)
EDO Page-Mode
Read-Write
(1,2)
Hidden Refresh
(2)
RAS
-Only Refresh
CBR Refresh
(3)
L
H
→
L
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either
LCAS
or
UCAS
active).
2. These READ cycles may also be BYTE READ cycles (either
LCAS
or
UCAS
active).
3. At least one of the two
CAS
signals must be active (
LCAS
or
UCAS
).
相關(guān)PDF資料
PDF描述
IS41C16256-60KI 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256-60T 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256-60TI 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C1664-30T 64K x 16 bit Dynamic RAM with EDO Page Mode
IS41C4100-35T 1Mx4 bit Dynamic RAM with EDO Page Mode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS41C16256-60KI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256-60T 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256-60TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256C 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4Mb DRAM WITH EDO PAGE MODE
IS41C16256C-35TLI 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 4M, 5V, EDO 動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 35ns, 40 pin TSOP II RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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