參數(shù)資料
型號： IRLU014N
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/10頁
文件大小： 110K
代理商： IRLU014N
IRLR/U014N
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 6A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 6A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
37
48
1.3
56
71
V
nS
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
10
40
A
Starting T
J
= 25
°
C, L = 1.96mH
R
G
= 25
, I
AS
= 6A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300μs; duty cycle
≤
2%.
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact
I
SD
≤
6.0A, di/dt
≤
210A/μs, V
DD
≤
V
,
T
J
≤
175
°
C
Notes:
Parameter
Min.
55
–––
–––
–––
1.0
3.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.056
–––
–––
0.14
–––
0.21
–––
–––
–––
–––
–––
25
–––
250
–––
100
–––
-100
–––
7.9
–––
1.4
–––
4.4
6.5
–––
47
–––
12
–––
23
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 6A
V
GS
= 4.5V, I
D
= 5A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 6A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 150
°
C
V
GS
= 16V
V
GS
= -16V
I
D
= 6A
V
DS
= 44V
V
GS
= 5.0V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 6A
R
G
= 6.2
,
V
GS
= 5.0V
R
D
= 4.5
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
V
V/
°
C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
265
80
38
–––
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nH
I
GSS
S
D
G
L
S
Internal Source Inductance
–––
7.5
–––
R
DS(on)
Static Drain-to-Source On-Resistance
L
D
Internal Drain Inductance
–––
4.5
–––
I
DSS
Drain-to-Source Leakage Current
相關(guān)PDF資料
PDF描述
IRLR014N HEXFET Power MOSFET
IRLZ10 TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 6.7A I(D) | TO-220AB
IRLZ14A TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-220AB
IRLZ20 TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 14A I(D) | TO-220AB
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