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參數(shù)資料
| 型號： | IRLL024NQ |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 3.1A I(D) | SOT-223 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 55V的五（巴西）直| 3.1AI（四）|的SOT - 223 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 158K |
| 代理商： | IRLL024NQ |
IRLL014N
2
www.irf.com
Parameter
Min. Typ. Max. Units
55
–––
–––
0.015 –––
–––
–––
–––
–––
–––
–––
1.0
–––
2.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.5
–––
1.1
–––
3.0
–––
5.1
–––
4.9
–––
14
–––
2.9
–––
230
–––
66
–––
30
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 2.0A
V
GS
= 5.0V, I
D
= 1.2A
V
GS
= 4.0V, I
D
= 1.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 1.0A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
= 2.0A
V
DS
= 44V
V
GS
= 10V, See Fig. 6 and 9
V
DD
= 28V
I
D
= 2.0A
R
G
= 6.0
R
D
= 14
,
See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
0.14
0.20
0.28
2.0
–––
25
250
100
-100
14
1.7
4.4
–––
–––
–––
–––
–––
–––
–––
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
ns
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
2.0A, di/dt
≤
170A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
V
DD
= 25V, starting T
J
= 25°C, L = 4.0mH
R
G
= 25
, I
AS
= 4.0A. (See Figure 12)
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.0A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
41
73
1.0
61
110
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
16
1.3
A
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