參數(shù)資料
型號(hào)： IRLI640
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.9A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）\u003d 0.18ohm，身份證\u003d 9.9A）
文件頁數(shù)： 2/8頁
文件大?。?/td> 332K
代理商： IRLI640
IRLI640G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 9.9A, V
GS
= 0V
T
J
= 25°C, I
F
= 17A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
310
3.2
2.0
470
4.8
V
ns
μC
V
DD
= 25V, starting T
J
= 25°C, L = 4.4mH
R
G
= 25
, I
AS
= 9.9A. (See Figure 12)
I
SD
≤
17A, di/dt
≤
150A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200
–––
–––
0.27
–––
–––
–––
–––
1.0
–––
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.0
–––
83
–––
44
–––
52
Conditions
V
GS
= 0V, ID = 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 5.0V, I
D
= 5.9A
V
GS
= 4.0V, I
D
= 5.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 10A
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, V
GS
= 0V, T
J
= 160°C
V
GS
= 10V
V
GS
= -10V
I
D
= 17A
V
DS
= 160V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 100V
I
D
= 17A
R
G
= 4.6
R
D
= 5.7
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
–––
0.18
0.27
2.0
–––
25
250
100
-100
66
9.0
38
–––
–––
–––
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1800
–––
–––
–––
–––
–––
400
120
pF
–––
–––
40
–––
–––
9.9
A
ns
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
D
Internal Drain Inductance
–––
4.5
–––
L
S
Internal Source Inductance
–––
7.5
–––
nH
nA
μA
R
DS(ON)
Static Drain-to-Source On-Resistance
t=60s, =60Hz
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