參數(shù)資料
型號(hào)： IRLI2505
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 51A I(D) | SOT-186
中文描述： 晶體管| MOSFET的| N溝道| 55V的五（巴西）直| 51A條（?。﹟的SOT - 186
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 143K
代理商： IRLI2505
IRLI2505
Parameter
Min. Typ. Max. Units
55
–––
–––
0.035 –––
–––
––– 0.008
–––
––– 0.010
–––
––– 0.013
1.0
–––
59
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
–––
160
–––
43
–––
84
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 31A
V
GS
= 5.0V, I
D
= 31A
V
GS
= 4.0V, I
D
= 26A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 54A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
= 54A
V
DS
= 44V
V
GS
= 5.0V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 54A
R
G
= 1.3
,
V
GS
= 5.0V
R
D
= 0.50
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
= 1.0MHz
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
2.0
–––
25
250
100
-100
130
25
67
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
C
Source-Drain Ratings and Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
5000 –––
1100 –––
390
12
pF
–––
–––
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
S
D
G
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
S
Internal Source Inductance
–––
7.5
–––
L
D
Internal Drain Inductance
–––
4.5
–––
μA
nA
ns
nH
R
DS(on)
Static Drain-to-Source On-Resistance
I
SD
≤
54A, di/dt
≤
230A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Use IRL2505 data and test conditions
t=60s, =60Hz
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 240μH
R
G
= 25
, I
AS
= 54A. (See Figure 12)
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 31A, V
GS
= 0V
T
J
= 25°C, I
F
= 54A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
140
650
1.3
210
970
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
A
–––
–––
360
–––
–––
58
S
D
G
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