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參數(shù)資料
| 型號(hào)： | IRLBD59N04E |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | IRLBD59N04E |
IRFLBD59N04E
8
www.irf.com
Case Outline 5 Lead-D
2
Pak (SMD-220)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 0.52mH
R
G
= 25
, I
AS
= 35A. (See Figure 12)
I
SD
≤
35A, di/dt
≤
160A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Current
limited by the package ( Die current is 59A)
C = 100pF, R = 1.5k
PIN ASSIGNMENTS
1 - G - GATE
2 - T1 - ANODE
3 - D - DRAIN
4 - T2 - CATHODE
5 - S - SOURCE
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
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Data and specifications subject to change without notice. 4/00
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