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參數(shù)資料
| 型號： | IRL5Y7413CM |
| 英文描述： | 30V Single N-Channel Hi-Rel MOSFET in a TO-257AA package |
| 中文描述： | 30V的單個N -溝道高可靠性MOSFET的采用TO - 257AA封裝 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 103K |
| 代理商： | IRL5Y7413CM |
IRL5Y7413CM
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
30
—
Typ
—
0.03
Max Units
—
—
Test Conditions
VGS = 0V, ID = 250
μ
A
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
1.0
30
—
—
—
—
—
—
—
—
0.025
0.030
—
—
25
250
VGS = 10V, ID = 18A
VGS = 4.5V, ID = 18A
VDS = VGS, ID = 250
μ
A
VDS = 10V, IDS = 18A
VDS = 30V ,VGS=0V
VDS = 24V,
VGS = 0V, TJ =125°C
VGS = 16V
VGS = -16V
VGS =10V, ID = 18A
VDS = 24V
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
79
9.0
23
20
130
52
46
—
nC
VDD = 15V, ID = 18A,
VGS =10V, RG = 6.2
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1670
660
80
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
1.67
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
18*
72
1.5
110
300
Test Conditions
—
—
—
—
—
V
ns
nC
T
j
= 25°C, IS = 18A, VGS = 0V
Tj = 25°C, IF = 18A, di/dt
≤
100A/
μ
s
VDD
≤
25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
* Current is limited by package
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRL5Y7413CMSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 18A 3PIN TO-257AA - Bulk |
| IRL5Y7413CMSCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 18A 3PIN TO-257AA - Bulk |
| IRL610 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRL610A | 功能描述:MOSFET 200V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRL610S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-263AB |
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