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參數(shù)資料
| 型號(hào)： | IRL5Y024CM |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET POWER MOSFET THRU-HOLE (TO-257AA) |
| 中文描述： | HEXFET功率MOSFET的通孔（對(duì)257AA） |
| 文件頁(yè)數(shù)： | 7/7頁(yè) |
| 文件大?。?/td> | 105K |
| 代理商： | IRL5Y024CM |
www.irf.com
7
IRL5Y024CM
Case Outline and Dimensions — TO-257AA
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25 V, Starting TJ = 25
°
C, L= 0.8mH
Peak IAS = 11A, RG= 25
ISD
≤
11A, di/dt
≤
222 A/
μ
s,
VDD
≤
55V, TJ
≤
150
°
C
Pulse width
≤
400
μ
s; Duty Cycle
≤
2%
Footnotes:
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