- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384506 > IRL5Y024CM (International Rectifier) HEXFET POWER MOSFET THRU-HOLE (TO-257AA) PDF資料下載
參數(shù)資料
| 型號： | IRL5Y024CM |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET POWER MOSFET THRU-HOLE (TO-257AA) |
| 中文描述： | HEXFET功率MOSFET的通孔（對257AA） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 105K |
| 代理商： | IRL5Y024CM |
IRL5Y024CM
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Min
55
—
Typ
—
0.06
Max Units
—
—
Test Conditions
VGS = 0V, ID = 250
μ
A
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
—
1.0
6.0
—
—
—
—
—
—
—
—
—
0.069
VGS = 10V, ID = 11A
0.085
VGS = 5.0V, ID = 11A
0.109
VGS = 4.0V, ID = 9.0A
2.0
V
VDS = VGS, ID = 250
μ
A
—
S (
)
VDS = 25V, IDS = 11A
25
VDS = 55V ,VGS=0V
250
VGS = 0V, TJ =125°C
100
-100
15
VGS =5.0V, ID = 11A
3.7
nC
8.5
11
VDD = 28V, ID = 11A,
133
VGS =5.0V, RG = 12
25
66
—
nH
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
VDS = 44V,
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
VGS = 16V
VGS = -16V
VDS = 44V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
520
140
57
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
ns
μ
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
3.57
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
17
68
1.3
70
120
Test Conditions
—
—
—
—
—
V
ns
nC
T
j
= 25°C, IS = 11A, VGS = 0V
Tj = 25°C, IF = 11A, di/dt
≥
100A/
μ
s
VDD
≤
30V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRL7833 | HEXFETPower MOSFET |
| IRL7833L | HEXFETPower MOSFET |
| IRL7833S | HEXFETPower MOSFET |
| IRL7N1404 | HEXFET POWER MOSFET SURFACE MOUNT (SMD-1) |
| IRL830S | POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRL5Y024CMSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 17A 3PIN TO-257 - Bulk |
| IRL5Y024CMSCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 17A 3PIN TO-257 - Bulk |
| IRL5Y7413CM | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 18A 3-Pin(3+Tab) TO-257AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 18A 3PIN TO-257 - Bulk |
| IRL5Y7413CMSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 18A 3PIN TO-257AA - Bulk |
| IRL5Y7413CMSCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 18A 3PIN TO-257AA - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。