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參數(shù)資料
| 型號(hào)： | IRHQ8214 |
| 英文描述： | 250V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a 28-pin LCC package |
| 中文描述： | 250V 1000kRad高可靠性四N通道工貿(mào)署在28硬化MOSFET的引腳LCC封裝 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 126K |
| 代理商： | IRHQ8214 |
Absolute Maximum Ratings ( Per Die)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
62
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
1.6
1.0
6.4
12
0.1
±20
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
1.6
1.2
3.5
-55 to 150
300 (for 5s)
0.89 (Typical)
g
Pre-Irradiation
International Rectifier’s RAD-Hard
TM
HEXFET
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite ap-
plications. These devices have been characterized for
both Total Dose and Single Event Effects (SEE). The com-
bination of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC to DC
converters and motor control. These devices retain all of
the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
12/22/2000
www.irf.com
1
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
For footnotes refer to the last page
LCC-28
Product Summary
Part Number Radiation Level R
DS(on)
IRHQ7214 100K Rads (Si) 2.25
IRHQ3214 300K Rads (Si) 2.25
IRHQ4214 600K Rads (Si) 2.25
IRHQ8214 1000K Rads (Si) 2.25
I
D
1.6A
1.6A
1.6A
1.6A
IRHQ7214
250V, QUAD N-CHANNEL
RAD-Hard
MOSFET TECHNOLOGY
HEXFET
PD - 93828
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHQ3214 | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | LLCC |
| IRHQ4214 | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | LLCC |
| IRHQ9110 | TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 100V V(BR)DSS | 2.3A I(D) | LLCC |
| IRHQ93110 | TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 100V V(BR)DSS | 2.3A I(D) | LLCC |
| IRHSLNA53064 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHQ9110 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHQ9110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHQ9110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHQ93110 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHSLNA53064 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) |
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