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參數(shù)資料
| 型號(hào)： | IRHQ9110 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 100V V(BR)DSS | 2.3A I(D) | LLCC |
| 中文描述： | 晶體管| MOSFET的|陣| P通道| 100V的五（巴西）直| 2.3AI（四）| LLCC |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | IRHQ9110 |
Absolute Maximum Ratings ( Per Die)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
75
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
-2.3
-1.5
-9.2
12
0.1
±20
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-2.3
1.2
9.0
-55 to 150
300 (for 5s)
0.89 (Typical)
g
Pre-Irradiation
International Rectifier’s RAD-Hard
TM
HEXFET
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite ap-
plications. These devices have been characterized for
both Total Dose and Single Event Effects (SEE). The com-
bination of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC to DC
converters and motor control. These devices retain all of
the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
12/27/00
www.irf.com
1
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
LCC-28
Product Summary
Part Number Radiation Level R
DS(on)
IRHQ9110 100K Rads (Si) 1.1
IRHQ93110 300K Rads (Si) 1.1
I
D
-2.3A
-2.3A
IRHQ9110
100V, QUAD P-CHANNEL
RAD-Hard
MOSFET TECHNOLOGY
HEXFET
PD - 93794A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHQ93110 | TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 100V V(BR)DSS | 2.3A I(D) | LLCC |
| IRHSLNA53064 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT |
| IRHSLNA53Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHSLNA54064 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT |
| IRHSLNA54Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHQ9110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHQ9110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHQ93110 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHSLNA53064 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) |
| IRHSLNA53Z60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
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