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參數(shù)資料
| 型號(hào)： | IRHQ6110 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 3A I(D) | LLCC |
| 中文描述： | 晶體管| MOSFET的|陣|互補(bǔ)| 100V的五（巴西）直| 3A條（?。﹟ LLCC |
| 文件頁(yè)數(shù)： | 4/14頁(yè) |
| 文件大?。?/td> | 201K |
| 代理商： | IRHQ6110 |
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IRHQ6110
Pre-Irradiation
4
www.irf.com
Table 1. Electrical Characteristics For Each N-Channel Device @ Tj = 25°C, Post Total Dose Irradiation
Parameter
100K Rads(Si)
1
300K to 1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 — 100 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.25 4.5 V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 25 — 25 μA V
DS
= 80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.556 — 0.706
V
GS
= 12V, I
D
= 1.9A
On-State Resistance (TO-39)
R
DS(on)
Static Drain-to-Source
— 0.60 — 0.75
V
GS
= 12V, I
D
= 1.9A
On-State Resistance (LCC-28)
V
SD
Diode Forward Voltage
— 1.2 — 1.2 V
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHQ6110
2. Part number IRHQ63110
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 3.0A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Cu
28.0
285 43.0 100 100 100 100 70
Br
36.8
305 39.0 100 80 70 50 —
I
59.8
343 32.6 50 40 35 — —
LET
Energy Range
V
DS
(V)
0
20
40
60
80
100
120
0
-5
-10
-15
-20
-25
VGS
V
Cu
Br
I
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHQ63110 | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 3A I(D) | LLCC |
| IRHQ7214 | 250V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a 28-pin LCC package |
| IRHQ8214 | 250V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a 28-pin LCC package |
| IRHQ3214 | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | LLCC |
| IRHQ4214 | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | LLCC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHQ6110SCS | 制造商:International Rectifier 功能描述:100V 3.000A HEXFET RADHARD - Bulk |
| IRHQ6110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHQ63110 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
| IRHQ7110 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHQ7110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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